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Using DC-DC Converters in Parallel

Using DC-DC Converters in Parallel

This article discusses methods in using two DC-DC converters in parallel operation for better reliability and redundancy for devices.


Nexeon Raises £30 million for Silicon-Anode Li-ions

Nexeon Raises £30 million for Silicon-Anode Li-ions


News May 05, 2016 by Jeff Shepard
Packaging for High-Voltage GaN Power Transistors

Packaging for High-Voltage GaN Power Transistors

Online Circuit Simulation supports SiC Devices

Online Circuit Simulation supports SiC Devices

Littelfuse to unveil new SiC Products at PCIM

Littelfuse to unveil new SiC Products at PCIM

1200V SiC MOSFET with 45-milliOhm On-Resistance

1200V SiC MOSFET with 45-milliOhm On-Resistance

SiC for safeguarding AC and DC power circuitry

SiC for safeguarding AC and DC power circuitry

This article discusses the novel Silicon Carbine based hybrid surge suppressor module for safeguarding AC and DC power circuitry and its benefits.


Reference Design for Inverters: First integrated solution for e-mobility and industry

Reference Design for Inverters: First integrated solution for e-mobility and industry

This article discusses the TDK and Infineon's new integrated solution for inverters for e-mobility power trains and industrial applications.


28V 30W GaN HEMT Die now Available

28V 30W GaN HEMT Die now Available

GaN Transistors in Inverters, Motors, and Power Modules

GaN Transistors in Inverters, Motors, and Power Modules

Wolfspeed SiC MOSFETs, Schottkys and Modules

Wolfspeed SiC MOSFETs, Schottkys and Modules

IGBT Enhances Energy Efficiency in Inverters

IGBT Enhances Energy Efficiency in Inverters

MACOM Sues Infineon over GaN Technology

MACOM Sues Infineon over GaN Technology


News Apr 26, 2016 by Jeff Shepard
DC-DC Converters can Drive SiC MOSFETs

DC-DC Converters can Drive SiC MOSFETs

Six Videos Featuring GaN Technology Applications

Six Videos Featuring GaN Technology Applications


News Apr 25, 2016 by Jeff Shepard
600-V GaN FET Power Stage

600-V GaN FET Power Stage

Increased Packing Density From Double-Sided Power Semiconductor Cooling

Increased Packing Density From Double-Sided Power Semiconductor Cooling

This article discusses the method of increasing packing density of power electronics using Chip-on-Heatsink Technology for better thermal management.


Thermal Management Materials for SiC and GaN Devices

Thermal Management Materials for SiC and GaN Devices

MPAC-Doherty devices Support GaN PA Frequencies

MPAC-Doherty devices Support GaN PA Frequencies

AIX G5+ C Qualified for Production of imec GaN-on-Si Materials

AIX G5+ C Qualified for Production of imec GaN-on-Si Materials


News Apr 18, 2016 by Jeff Shepard