EEPower

Latest Semiconductors Articles

Categories

DC-DC Converters can Drive SiC MOSFETs

DC-DC Converters can Drive SiC MOSFETs

new products Apr 26, 2016 by Jeff Shepard
Six Videos Featuring GaN Technology Applications

Six Videos Featuring GaN Technology Applications

News Apr 25, 2016 by Jeff Shepard
600-V GaN FET Power Stage

600-V GaN FET Power Stage

new products Apr 24, 2016 by Jeff Shepard
Increased Packing Density From Double-Sided Power Semiconductor Cooling

Increased Packing Density From Double-Sided Power Semiconductor Cooling

This article discusses the method of increasing packing density of power electronics using Chip-on-Heatsink Technology for better thermal management.

Technical Articles Apr 22, 2016 by Roland Dische
Thermal Management Materials for SiC and GaN Devices

Thermal Management Materials for SiC and GaN Devices

new products Apr 21, 2016 by Jeff Shepard
MPAC-Doherty devices Support GaN PA Frequencies

MPAC-Doherty devices Support GaN PA Frequencies

new products Apr 19, 2016 by Jeff Shepard
AIX G5+ C Qualified for Production of imec GaN-on-Si Materials

AIX G5+ C Qualified for Production of imec GaN-on-Si Materials

News Apr 18, 2016 by Jeff Shepard
USCi and Elettromeccanica ECC SpAto sign Distribution Agreement

USCi and Elettromeccanica ECC SpAto sign Distribution Agreement

United Silicon Carbide Inc. (USCi) a leading manufacturer for SiC devices located in Monmouth Junction, New Jersey announces a distribution…

new products Apr 17, 2016 by United Silicon Carbide
Innovation Award 2016 and the Young Engineer Award

Innovation Award 2016 and the Young Engineer Award

The jury has decided to give the SEMIKRON Innovation Award 2016 to a researcher team from Erlangen for its innovation on 'Zero Tolerance -…

new products Apr 17, 2016 by SEMIKRON
IX2120B Drives Both High Side and Low Side IGBTs or MOSFETs

IX2120B Drives Both High Side and Low Side IGBTs or MOSFETs

IXYS Integrated Circuits Division (ICD), Inc., a wholly owned subsidiary of IXYS Corporation (NASDAQ: IXYS), announced the immediate availability…

new products Apr 17, 2016 by IXYS
650V GaN 2kW Half-Bridge Evaluation Board

650V GaN 2kW Half-Bridge Evaluation Board

News Apr 13, 2016 by Jeff Shepard
Freebird and EPC partner on Rad-Hard GaN Power Conversion

Freebird and EPC partner on Rad-Hard GaN Power Conversion

News Apr 13, 2016 by Jeff Shepard
GaN RF Devices Demonstrate Reliability in Space Environments

GaN RF Devices Demonstrate Reliability in Space Environments

News Apr 13, 2016 by Jeff Shepard
Opto-Isolated IGBT Gate Pre-Driver IC for In-Vehicle Inverters

Opto-Isolated IGBT Gate Pre-Driver IC for In-Vehicle Inverters

new products Apr 13, 2016 by Power Pulse1595211359
Dimmable LED Driver IC with 650V MOSFET and PFC

Dimmable LED Driver IC with 650V MOSFET and PFC

new products Apr 12, 2016 by Jeff Shepard
Two-Dimensional Replacement proposed for Silicon Devices

Two-Dimensional Replacement proposed for Silicon Devices

News Apr 11, 2016 by Jeff Shepard
3rd Gen SiC SBDs, Full SiC Modules, and Arduino Shield for Stepper Motors

3rd Gen SiC SBDs, Full SiC Modules, and Arduino Shield for Stepper Motors

News Apr 10, 2016 by Power Pulse1595211359
Gallium Nitride to Supplant Silicon in Integrated Circuits

Gallium Nitride to Supplant Silicon in Integrated Circuits

News Apr 07, 2016 by Jeff Shepard
Dual HV IGBT Modules for Traction and Heavy Industry

Dual HV IGBT Modules for Traction and Heavy Industry

new products Apr 07, 2016 by Power Pulse1595211359
Power Modules for Combining Innovation, Flexibility and Power Capability in the Various 3-Level Topologies

Power Modules for Combining Innovation, Flexibility and Power Capability in the Various 3-Level Topologies

This article introduces Mitsubishi Electric Corporation's new three-level topology power modules with optimized packaging for 3-level inverter…

Technical Articles Apr 07, 2016 by Narender Lakshmanan