EEPower

Latest Semiconductors Articles

Categories

Practical Solutions Design with GaN Power Transistors

Practical Solutions Design with GaN Power Transistors

This article discusses the advantages of Gallium Nitride over Silicon Carbide in terms of performance and application.


imec and Qromis Fab p-GaN HEMTs on 200mm CTE-matched Substrates

imec and Qromis Fab p-GaN HEMTs on 200mm CTE-matched Substrates


News Apr 08, 2018 by Paul Shepard
A SiC MOSFET for Mainstream Adoption

A SiC MOSFET for Mainstream Adoption

This article highlights Infineon CoolSiC™ semiconductor solutions with an implementation of a 1200 V CoolSiC™ MOSFET in three-phase Si based…


Emerging Player in Power Control and Sensing

Emerging Player in Power Control and Sensing

This article is about a VIP-Interview with David Heinzmann, President and CEO of Littelfuse Inc.


Highly Efficient Power Supply System with High Dielectric Strength

Highly Efficient Power Supply System with High Dielectric Strength

New powerful semiconductor modules with high reverse voltages facilitate modern medium-voltage applications.


1.7kV SiC FETs Enable 1.5kV-Input DC-DC Optimizer for Solar + Storage and Microgrids

1.7kV SiC FETs Enable 1.5kV-Input DC-DC Optimizer for Solar + Storage and Microgrids

TI Expands GaN Power Portfolio with Small and Fast GaN Drivers

TI Expands GaN Power Portfolio with Small and Fast GaN Drivers

The LMG1020 and LMG1210 can deliver switching frequencies of 50 MHz while improving efficiency and enabling five times smaller solution sizes…


The State of Intelligent SiC MOSFET Gate Drivers

The State of Intelligent SiC MOSFET Gate Drivers

This article talks about the major improvements on Augmented Switching which resulted to significant loss reduction on overshoot voltage.


MOSFET with High ESD Protection to Drive Headlight LEDs

MOSFET with High ESD Protection to Drive Headlight LEDs

Unidirectional TVS Diode Arrays in Smallest Footprint Available Protect IO and Power Ports from ESD

Unidirectional TVS Diode Arrays in Smallest Footprint Available Protect IO and Power Ports from ESD

Littelfuse, Inc., the global leader in circuit protection, today introduced two series of AEC-Q101-qualified, unidirectional TVS Diode Arrays.


new products Mar 29, 2018 by Littelfuse
SiC and GaN Systems Design Engineers no Longer “flying blind”

SiC and GaN Systems Design Engineers no Longer “flying blind”

This article highlights Tektronix IsoVu Measurement System for complete galvanic isolation from DUT and uses an electro-optic sensor to convert…


Fixed-Frequency PWM Controller and Integrated Power FET

Fixed-Frequency PWM Controller and Integrated Power FET

Wide Band Gap is No Mystery

Wide Band Gap is No Mystery

This article highlights Siemens AG GaN power semiconductors technology in the power electronics system design that work at higher switching…


Taking Advantage of SiC’s High Switching Speeds

Taking Advantage of SiC’s High Switching Speeds

This article highlights Littelfuse Incorporated some of the prevailing challenges associated with the use of SiC and best practices to help design…


Great Expectations for GaN Power Devices in Space Applications

Great Expectations for GaN Power Devices in Space Applications


News Mar 24, 2018 by Paul Shepard
Accelerating the Adoption of SiC Power

Accelerating the Adoption of SiC Power

This article highlights Cree | Wolfspeed SiC availability and adoption considering markets today the customer base is harvesting the advantages SiC…


DCM 1000 Designed to Meet the Future Demand of Electric Vehicle Drive Train

DCM 1000 Designed to Meet the Future Demand of Electric Vehicle Drive Train

The acceleration of global warming and pollution, as well as international carbon emission targets, initiated a process to reduce emissions in all…


Software-Defined Inverter features 3-Phase GaN Power Stage

Software-Defined Inverter features 3-Phase GaN Power Stage


News Mar 20, 2018 by Paul Shepard
35% Lower Energy Consumption with SiC-Based Propulsion Technology

35% Lower Energy Consumption with SiC-Based Propulsion Technology


News Mar 18, 2018 by Paul Shepard
High-Power GaN Converter IMS Evaluation Platform

High-Power GaN Converter IMS Evaluation Platform