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GaN Enables Efficient and Compact Capacitive-Coupled Power Conversion

GaN Enables Efficient and Compact Capacitive-Coupled Power Conversion


News Jan 07, 2019 by Paul Shepard
Hybrid Protection Module Guards Consumer Electronics from Sustained Overcurrents and Overvoltages

Hybrid Protection Module Guards Consumer Electronics from Sustained Overcurrents and Overvoltages

Littelfuse, Inc. recently introduced the first of a series of bidirectional TVS Diode Arrays (SPA® Diodes) designed to protect high-end consumer…


new products Jan 07, 2019 by Littelfuse
High Accuracy Large Aperture Current Transducer from Danisense Measures Up to 1200Arms

High Accuracy Large Aperture Current Transducer from Danisense Measures Up to 1200Arms

DM1200 is a high-accuracy current transducer capable of measuring signals up to 1200Arms and 1500A DC.


new products Jan 07, 2019 by Danisense
ECPE Announces Workshops and Events for 2019

ECPE Announces Workshops and Events for 2019

ECPE recently released the program for its upcoming workshop 'New Technologies for Medium-Frequency Solid-State Transformers' taking…


tech insights Jan 07, 2019 by ECPE
Osram and GaN Systems Develop Ultrafast and High-Power Laser Driver for LiDAR

Osram and GaN Systems Develop Ultrafast and High-Power Laser Driver for LiDAR


News Jan 03, 2019 by Paul Shepard
Osram and GaN Systems Introduce Ultrafast Laser Driver with High-Power Multi-Channel for LiDAR

Osram and GaN Systems Introduce Ultrafast Laser Driver with High-Power Multi-Channel for LiDAR

Osram Opto Semiconductors announced an ultrafast laser driver with a high-power, multi-channel Surface Mount (SMT) laser for LiDAR (light detection…


Power Control at 27 MHz with Variable Reactance

Power Control at 27 MHz with Variable Reactance

This is the second of a three part series. In Part 1, we described a quasi-class E circuit providing variable power into inductive and resistive loads


Sanan IC Announces Commercial Release of 6-Inch SiC Wafer Foundry Process

Sanan IC Announces Commercial Release of 6-Inch SiC Wafer Foundry Process


News Dec 21, 2018 by Paul Shepard
Driving SiC MOSFETs with a HighSpeed Gate Driver IC

Driving SiC MOSFETs with a HighSpeed Gate Driver IC

Silicon-Carbide (SiC) MOSFETs that become a visible part of the MOSFET market require special gate drivers that are able to provide a negative…


Dual-Channel Isolated MOSFET Gate Driver ICs with Accurate and Stable Timing

Dual-Channel Isolated MOSFET Gate Driver ICs with Accurate and Stable Timing

Next-Generation SiC Transistors Claim World’s Lowest On-State Resistance

Next-Generation SiC Transistors Claim World’s Lowest On-State Resistance

Maximizing System Efficiency with IGBT Modules

Maximizing System Efficiency with IGBT Modules

With the recent push from both the wider industry sectors and the government for high-efficiency systems, the semiconductor industry is responding…


GaN FETs Enable Military-Grade High-Frequency Power Supply

GaN FETs Enable Military-Grade High-Frequency Power Supply

ASIL-Certified BLDC System Basis MOSFET Driver

ASIL-Certified BLDC System Basis MOSFET Driver

GaN Systems Onboard in an Abundance of Innovative Products at CES 2019

GaN Systems Onboard in an Abundance of Innovative Products at CES 2019

GaN Systems invites visitors at the Consumer Electronics Show (CES) to see the latest GaN powered breakthroughs.


new products Dec 17, 2018 by GaN Systems
Carbon-Doping Free GaN-on-Si Displays Better Dynamic R(on)

Carbon-Doping Free GaN-on-Si Displays Better Dynamic R(on)


News Dec 14, 2018 by Paul Shepard
How Long will Your System Last A Discrete IGBT Reliability Study

How Long will Your System Last A Discrete IGBT Reliability Study

High quality and reliability are among the key aspects in the design of a power semiconductor. The influence of these parameters is evident since they


GaN Enables Small & Fast USB Wall-Mount Chargers

GaN Enables Small & Fast USB Wall-Mount Chargers

Vertical Ga2O3 Power FET Produced with Low-Cost, Highly-Manufacturable Ion Implantation Doping Process

Vertical Ga2O3 Power FET Produced with Low-Cost, Highly-Manufacturable Ion Implantation Doping Process


News Dec 13, 2018 by Paul Shepard
Transphorm Ships Over a Quarter of a Million GaN Power Devices

Transphorm Ships Over a Quarter of a Million GaN Power Devices


News Dec 13, 2018 by Paul Shepard