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GaN Systems Onboard in an Abundance of Innovative Products at CES 2019

GaN Systems Onboard in an Abundance of Innovative Products at CES 2019

GaN Systems invites visitors at the Consumer Electronics Show (CES) to see the latest GaN powered breakthroughs.


new products Dec 17, 2018 by GaN Systems
Carbon-Doping Free GaN-on-Si Displays Better Dynamic R(on)

Carbon-Doping Free GaN-on-Si Displays Better Dynamic R(on)


News Dec 14, 2018 by Paul Shepard
How Long will Your System Last A Discrete IGBT Reliability Study

How Long will Your System Last A Discrete IGBT Reliability Study

High quality and reliability are among the key aspects in the design of a power semiconductor. The influence of these parameters is evident since they


GaN Enables Small & Fast USB Wall-Mount Chargers

GaN Enables Small & Fast USB Wall-Mount Chargers

Vertical Ga2O3 Power FET Produced with Low-Cost, Highly-Manufacturable Ion Implantation Doping Process

Vertical Ga2O3 Power FET Produced with Low-Cost, Highly-Manufacturable Ion Implantation Doping Process


News Dec 13, 2018 by Paul Shepard
Transphorm Ships Over a Quarter of a Million GaN Power Devices

Transphorm Ships Over a Quarter of a Million GaN Power Devices


News Dec 13, 2018 by Paul Shepard
Flip Chip Schottky Diode in Low-Profile WLCSP

Flip Chip Schottky Diode in Low-Profile WLCSP

GaN-Enabled Wirelessly Powered Systems for the Home and High-Resolution LiDAR

GaN-Enabled Wirelessly Powered Systems for the Home and High-Resolution LiDAR


News Dec 12, 2018 by Paul Shepard
High-Current IGBT Gate Driver with Active Miller Clamp

High-Current IGBT Gate Driver with Active Miller Clamp

28GHz GaN Front-End Module Targets 5G Rollout

28GHz GaN Front-End Module Targets 5G Rollout

GaN Enables 14mm-Thin 45W Wall Charger

GaN Enables 14mm-Thin 45W Wall Charger

650V D-Mode GaN HEMTs Produced on 200mm Gan-on-Si Wafers with CMOS-Compatible Process

650V D-Mode GaN HEMTs Produced on 200mm Gan-on-Si Wafers with CMOS-Compatible Process


News Dec 06, 2018 by Paul Shepard
New Mechanism for Enhancing Reliability of SiC Power Devices Detailed at IEDM

New Mechanism for Enhancing Reliability of SiC Power Devices Detailed at IEDM


News Dec 06, 2018 by Paul Shepard
IEEE Energy Conversion Congress and Expo 2018

IEEE Energy Conversion Congress and Expo 2018

Energy Conversion Congress and Expo (ECCE)—the foremost IEEE conference in the field of electrical and electromechanical energy…


tech insights Dec 05, 2018 by Gary Dolny
High-Voltage GaN Helps Inergy Disrupt the Solar Power Generator Market

High-Voltage GaN Helps Inergy Disrupt the Solar Power Generator Market


News Dec 04, 2018 by Paul Shepard
TowerJazz and KERI Prototyping SiC FET Gate Driver IC on 0.18um SOI Platform

TowerJazz and KERI Prototyping SiC FET Gate Driver IC on 0.18um SOI Platform


News Dec 03, 2018 by Paul Shepard
UnitedSiC Adds Kelvin Connection Packages into SiC FET Offering

UnitedSiC Adds Kelvin Connection Packages into SiC FET Offering


News Dec 03, 2018 by Paul Shepard
UnitedSiC Introduces Kelvin Connection Parts into UF3C FAST FET Series

UnitedSiC Introduces Kelvin Connection Parts into UF3C FAST FET Series

UnitedSiC expands its UF3C FAST Series product offering by introducing an additional range of 650 V and 1200 V high-performance silicon carbide FETs


Dialog Semiconductor Introduces First Fully-Integrated Nanopower PMICs for Low-Power IoT Applications

Dialog Semiconductor Introduces First Fully-Integrated Nanopower PMICs for Low-Power IoT Applications

Dialog Semiconductor unveiled its first fully-integrated nanopower PMICs for IoT applications: the DA9070 and DA9073.


EPC Expands Asian Team to Support Accelerating GaN Growth

EPC Expands Asian Team to Support Accelerating GaN Growth


News Nov 28, 2018 by Paul Shepard