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OPPO Employs GaN MOSFETs in Three New Flash Charge Technologies

OPPO Employs GaN MOSFETs in Three New Flash Charge Technologies


News Sep 19, 2019 by Paul Shepard
3-Phase, 1.25kW, 200Vac GaN Inverter Reference Design for Integrated Drives

3-Phase, 1.25kW, 200Vac GaN Inverter Reference Design for Integrated Drives


News Sep 17, 2019 by Paul Shepard
650V / 72mΩ GaN FETs in a PQFN88 Package

650V / 72mΩ GaN FETs in a PQFN88 Package

Low-Cost Version of 600V Half-Bridge Driver IC

Low-Cost Version of 600V Half-Bridge Driver IC

1.2kW GaN FET Half-Bridge Synchronous Buck or Boost Evaluation Board

1.2kW GaN FET Half-Bridge Synchronous Buck or Boost Evaluation Board


News Sep 12, 2019 by Paul Shepard
RIGOL Introduces New “Possibilities and More” Brand Identity

RIGOL Introduces New “Possibilities and More” Brand Identity

This article features RIGOL Technologies launch of its redesigned brand identity system as well as the 3rd generation brand tagline…


new products Sep 11, 2019 by RIGOL
HCL Technologies Acquires Sankalp Semiconductor

HCL Technologies Acquires Sankalp Semiconductor


News Sep 10, 2019 by Paul Shepard
DuPont Electronics & Imaging Divests SiC Wafer Business to SK Siltron

DuPont Electronics & Imaging Divests SiC Wafer Business to SK Siltron


News Sep 10, 2019 by Paul Shepard
Taiwan Semiconductor Introduces Dual N-Channel Power MOSFET in-a-PDFN56 Dual Package

Taiwan Semiconductor Introduces Dual N-Channel Power MOSFET in-a-PDFN56 Dual Package

Taiwan Semiconductor Introduces Dual N-Channel Power MOSFET in a PDFN56 Dual Package.


GaNPower International Announces New 1200V GaN Power Switch with Kevin Source Lead

GaNPower International Announces New 1200V GaN Power Switch with Kevin Source Lead

This article highlights GaNPower International for the release of a high performance 1200V GaN power switching device (product code GPIHV30DDP5L).


GaN-Based 110W LED Drivers Claim Industry-Leading Power Density and Efficiency

GaN-Based 110W LED Drivers Claim Industry-Leading Power Density and Efficiency

EPC and Solace Power Partner to Use GaN FETs in 250-W Wireless Power Platforms

EPC and Solace Power Partner to Use GaN FETs in 250-W Wireless Power Platforms


News Sep 04, 2019 by Paul Shepard
World’s First Multi-Cell GaN-HEMT Bonded Directly to Diamond Substrate

World’s First Multi-Cell GaN-HEMT Bonded Directly to Diamond Substrate


News Sep 01, 2019 by Paul Shepard
Low-Profile 0402-Sized Chip Inductors Handle up to 2.3A

Low-Profile 0402-Sized Chip Inductors Handle up to 2.3A

SparkFun gets FCC/IC/CE Mark Approval on Open-Source BLE Module

SparkFun gets FCC/IC/CE Mark Approval on Open-Source BLE Module


News Aug 29, 2019 by Paul Shepard
65W GaN-Based Adapter for Appliances and Industrial Applications – Reference Design

65W GaN-Based Adapter for Appliances and Industrial Applications – Reference Design


News Aug 25, 2019 by Paul Shepard
Improved Crystal Semiconductor Efficiency Measurements Could Lead to Better Solar Cells

Improved Crystal Semiconductor Efficiency Measurements Could Lead to Better Solar Cells


News Aug 23, 2019 by Paul Shepard
Inductors Meet Complex Requirements of GaN-Based High Power Density Designs

Inductors Meet Complex Requirements of GaN-Based High Power Density Designs

Advanced Battery Protector IC with Integrated Low Iq Fuel Gauge

Advanced Battery Protector IC with Integrated Low Iq Fuel Gauge

PowerAmerica Awards $24 Million to Projects to Advance Wide Bandgap Technology

PowerAmerica Awards $24 Million to Projects to Advance Wide Bandgap Technology


News Aug 21, 2019 by Paul Shepard