The new Super Junction MOSFETS, feature a 115 mm2 footprint, fully 23% smaller than that of D2PAK devices
The new Super Junction MOSFETS, feature a 115 mm2 footprint, fully 23% smaller than that of D2PAK devices
The Dual-Channel H-bridge device with PWM control will drive a single stepper motor or two brushed DC motors
The Dual-Channel H-bridge device with PWM control will drive a single stepper motor or two brushed DC motors
The partnership between Microchip and Efficient Power Conversion (EPC) has yielded two 250W, 48V DC-DC solutions for…
The partnership between Microchip and Efficient Power Conversion (EPC) has yielded two 250W, 48V DC-DC solutions for ultra-thin laptops, displays,…
The 65 watt DC/DC converters can switch at 2MHz, operate with a DC input ranging up to 24 volts, and are offered in 3mm X…
The 65 watt DC/DC converters can switch at 2MHz, operate with a DC input ranging up to 24 volts, and are offered in 3mm X 3mm QFN packages
The MM5130, with 4 channels, 25W power handling and DC-26GHz operation in a miniaturized surface-mount package, brings…
The MM5130, with 4 channels, 25W power handling and DC-26GHz operation in a miniaturized surface-mount package, brings major improvements to…
This article highlights Maxim Integrated MAX77655 single-inductor multiple output (SIMO) power management IC (PMIC)…
This article highlights Maxim Integrated MAX77655 single-inductor multiple output (SIMO) power management IC (PMIC) that provides the…
The new chip enables wireless charging to take place almost as quickly as charging via cable
The new chip enables wireless charging to take place almost as quickly as charging via cable
Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active…
Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active power management, and…
The new MinE-Cap IC enables engineers to employ physically smaller filter capacitors without increasing output ripple or…
The new MinE-Cap IC enables engineers to employ physically smaller filter capacitors without increasing output ripple or decreasing operating…
This article highlights Keysight Technologies that overcome the challenges associated with GaN FET dynamic characterization.
This article highlights Keysight Technologies that overcome the challenges associated with GaN FET dynamic characterization.
The modules are fully protected against short-circuit, over-current, over-temperature and input under-voltage and are…
The modules are fully protected against short-circuit, over-current, over-temperature and input under-voltage and are equipped with enable, power…
GaN Systems’ New study illustrates how Gallium Nitride (GaN) stacks up against classical MOSFETs in real-world situations.
GaN Systems’ New study illustrates how Gallium Nitride (GaN) stacks up against classical MOSFETs in real-world situations.
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for…
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for fast switching, wide…
Power electronics company STMicroelectronics is acquiring France-based SOMOS Semiconductor, a power amplifier and RF specialist.
Power electronics company STMicroelectronics is acquiring France-based SOMOS Semiconductor, a power amplifier and RF specialist.
GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.
GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.
This article details how the ascent of GaN is redefining power conversion.
This article details how the ascent of GaN is redefining power conversion.
This article highlights GaN Systems GS-065-060-5-T-A that is designed to meet automotive reliability standards including…
This article highlights GaN Systems GS-065-060-5-T-A that is designed to meet automotive reliability standards including AEC-Q101 qualification and…
This article describes an ultra-low parasitics Eon/Eoff measurement platform and the advantages of 100V GaN in 48V applications.
This article describes an ultra-low parasitics Eon/Eoff measurement platform and the advantages of 100V GaN in 48V applications.
The MasterGaN combination will simplify designing chargers and power adapters for applications of up to 400W
The MasterGaN combination will simplify designing chargers and power adapters for applications of up to 400W
This article focuses on the stressor of current. Parts were tested to failure under two specific conditions that…
This article focuses on the stressor of current. Parts were tested to failure under two specific conditions that demonstrate the exceptional…
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