EEPower

Latest Gallium Nitride Articles

Categories

RECOM Power Modules Feature High Levels of Integration

RECOM Power Modules Feature High Levels of Integration

The modules are fully protected against short-circuit, over-current, over-temperature and input under-voltage and are equipped with enable, power…


GaN Systems Details the Reliability of Gallium Nitride Transistors

GaN Systems Details the Reliability of Gallium Nitride Transistors

GaN Systems’ New study illustrates how Gallium Nitride (GaN) stacks up against classical MOSFETs in real-world situations.


News Oct 28, 2020 by Gary Elinoff
Tektronix Launches 1100V Parametric Testing System For Wide Bandgap Technologies in Automotive Applications

Tektronix Launches 1100V Parametric Testing System For Wide Bandgap Technologies in Automotive Applications

Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for fast switching, wide…


STMicroelectronics Acquires French Fabless Semiconductor Company SOMOS

STMicroelectronics Acquires French Fabless Semiconductor Company SOMOS

Power electronics company STMicroelectronics is acquiring France-based SOMOS Semiconductor, a power amplifier and RF specialist.


News Oct 27, 2020 by Shannon Cuthrell
GaN Systems Introduces Next-Gen Automotive-Qualified Transistors

GaN Systems Introduces Next-Gen Automotive-Qualified Transistors

GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.


Power Conversion with GaN-on-Si Integrated Circuits

Power Conversion with GaN-on-Si Integrated Circuits

This article details how the ascent of GaN is redefining power conversion.


GaN Systems Extends Market Leadership with Next Generation Automotive-Qualified Transistors

GaN Systems Extends Market Leadership with Next Generation Automotive-Qualified Transistors

This article highlights GaN Systems GS-065-060-5-T-A that is designed to meet automotive reliability standards including AEC-Q101 qualification and…


Analyzing the Advantages of 100V GaN in 48V Applications

Analyzing the Advantages of 100V GaN in 48V Applications

This article describes an ultra-low parasitics Eon/Eoff measurement platform and the advantages of 100V GaN in 48V applications.


STMicroelectronics Unveils Half-Bridge Driver Packaged With Two Power GaN HEMTs

STMicroelectronics Unveils Half-Bridge Driver Packaged With Two Power GaN HEMTs

The MasterGaN combination will simplify designing chargers and power adapters for applications of up to 400W


Testing Gallium Nitride Devices Under Extreme Voltage and Current Stress

Testing Gallium Nitride Devices Under Extreme Voltage and Current Stress

This article focuses on the stressor of current. Parts were tested to failure under two specific conditions that demonstrate the exceptional…


EPC Space Announces a Family of Radiation-Hardened 40V to 300V GaN Power Transistors

EPC Space Announces a Family of Radiation-Hardened 40V to 300V GaN Power Transistors

The new enhancement-mode Gallium Nitride (eGaN) devices are aimed at critical applications in defense and aerospace


Modern Clamping Systems for Testing Power Semiconductor Devices

Modern Clamping Systems for Testing Power Semiconductor Devices

This article describes the steps of development and research carried out to design a clamping system for disc semiconductors and analyzes the…


NXP Opens New Advanced GaN Fab in Arizona

NXP Opens New Advanced GaN Fab in Arizona

Dutch-American semiconductor giant NXP opened a new RF GaN wafer fab in Arizona this week.


News Oct 01, 2020 by Shannon Cuthrell
Space-Qualified Rad-Hard Enhancement-Mode GaN Drivers and Power Stages

Space-Qualified Rad-Hard Enhancement-Mode GaN Drivers and Power Stages

EPC Space features a family of Rad Hard enhancement mode GaN drivers and power stages.


STMicroelectronics Pioneers Smaller and Faster Chargers and Power Supplies with World’s First Driver and GaN Device

STMicroelectronics Pioneers Smaller and Faster Chargers and Power Supplies with World’s First Driver and GaN Device

STMicroelectronics unveiled MasterGaN®, the world-first platform embedding a half-bridge driver based on silicon technology along with a pair of…


Alpha and Omega Semiconductor Introduces 4-Channel Ultra-Low Capacitance Ultra-Low Clamping Voltage TVS Array

Alpha and Omega Semiconductor Introduces 4-Channel Ultra-Low Capacitance Ultra-Low Clamping Voltage TVS Array

Alpha and Omega Semiconductor introduced a series of Transient Voltage Suppressor (TVS) for high-speed line protection using the best-in-class low…


Telechips Chooses Dialog Semiconductor as its Preferred Power Management Partner

Telechips Chooses Dialog Semiconductor as its Preferred Power Management Partner

Dialog Semiconductor becomes Telechips' chosen partner for the further development of power management solutions.


News Sep 29, 2020 by Stephanie Leonida
TT Electronics Introduces New Family of Anti-Sulphur, High Reliability Thin Film Chip Resistors

TT Electronics Introduces New Family of Anti-Sulphur, High Reliability Thin Film Chip Resistors

This article highlights TT Electronics APC Series resistors with its family of high reliability surface mount resistors that have been qualified…


Alpha and Omega Semiconductor Unveils New Generation of DrMOS Power Stage

Alpha and Omega Semiconductor Unveils New Generation of DrMOS Power Stage

Alpha and Omega Semiconductor announced a new series of DrMOS targeting multiphase VR regulators powering high-performance GPU and memory in…


ON Semiconductor CEO Announces Retirement

ON Semiconductor CEO Announces Retirement

The president and CEO of one of the U.S.’s most prominent semiconductor manufacturers announced he’s stepping down to retire in May 2021.


News Sep 21, 2020 by Shannon Cuthrell