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Power Control at 27 MHz with Variable Reactance

Power Control at 27 MHz with Variable Reactance

This is the second of a three part series. In Part 1, we described a quasi-class E circuit providing variable power into inductive and resistive loads


Sanan IC Announces Commercial Release of 6-Inch SiC Wafer Foundry Process

Sanan IC Announces Commercial Release of 6-Inch SiC Wafer Foundry Process


News Dec 21, 2018 by Paul Shepard
Driving SiC MOSFETs with a HighSpeed Gate Driver IC

Driving SiC MOSFETs with a HighSpeed Gate Driver IC

Silicon-Carbide (SiC) MOSFETs that become a visible part of the MOSFET market require special gate drivers that are able to provide a negative…


Third-Generation 0.18-Micron Bipolar-CMOS-DMOS Process Technology

Third-Generation 0.18-Micron Bipolar-CMOS-DMOS Process Technology


News Dec 20, 2018 by Paul Shepard
Dual-Channel Isolated MOSFET Gate Driver ICs with Accurate and Stable Timing

Dual-Channel Isolated MOSFET Gate Driver ICs with Accurate and Stable Timing

Assessing the Promise of Gallium Oxide Power Devices

Assessing the Promise of Gallium Oxide Power Devices


News Dec 20, 2018 by Paul Shepard
Next-Generation SiC Transistors Claim World’s Lowest On-State Resistance

Next-Generation SiC Transistors Claim World’s Lowest On-State Resistance

Maximizing System Efficiency with IGBT Modules

Maximizing System Efficiency with IGBT Modules

With the recent push from both the wider industry sectors and the government for high-efficiency systems, the semiconductor industry is responding…


GaN FETs Enable Military-Grade High-Frequency Power Supply

GaN FETs Enable Military-Grade High-Frequency Power Supply

ASIL-Certified BLDC System Basis MOSFET Driver

ASIL-Certified BLDC System Basis MOSFET Driver

GaN Systems Onboard in an Abundance of Innovative Products at CES 2019

GaN Systems Onboard in an Abundance of Innovative Products at CES 2019

GaN Systems invites visitors at the Consumer Electronics Show (CES) to see the latest GaN powered breakthroughs.


new products Dec 17, 2018 by GaN Systems
Chip-type Ceramic Rechargeable Batteries Coming in April 2019

Chip-type Ceramic Rechargeable Batteries Coming in April 2019


News Dec 16, 2018 by Paul Shepard
Carbon-Doping Free GaN-on-Si Displays Better Dynamic R(on)

Carbon-Doping Free GaN-on-Si Displays Better Dynamic R(on)


News Dec 14, 2018 by Paul Shepard
How Long will Your System Last A Discrete IGBT Reliability Study

How Long will Your System Last A Discrete IGBT Reliability Study

High quality and reliability are among the key aspects in the design of a power semiconductor. The influence of these parameters is evident since they


H-bridge Driver IC Supporting 1.8V Low-Voltage and 4.0A Current Drive

H-bridge Driver IC Supporting 1.8V Low-Voltage and 4.0A Current Drive

GaN Enables Small & Fast USB Wall-Mount Chargers

GaN Enables Small & Fast USB Wall-Mount Chargers

Vertical Ga2O3 Power FET Produced with Low-Cost, Highly-Manufacturable Ion Implantation Doping Process

Vertical Ga2O3 Power FET Produced with Low-Cost, Highly-Manufacturable Ion Implantation Doping Process


News Dec 13, 2018 by Paul Shepard
Transphorm Ships Over a Quarter of a Million GaN Power Devices

Transphorm Ships Over a Quarter of a Million GaN Power Devices


News Dec 13, 2018 by Paul Shepard
Thick-Film Chip Resistors Deliver Industry-Leading TCR Characteristics

Thick-Film Chip Resistors Deliver Industry-Leading TCR Characteristics

Automotive Data Flow Processor Test Chip Announced by NSITEXE

Automotive Data Flow Processor Test Chip Announced by NSITEXE


News Dec 13, 2018 by Paul Shepard