This article highlights UnitedSiC UF3C120150K4S 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin…
This article highlights UnitedSiC UF3C120150K4S 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin Sense discrete package option.
This article highlights Efficient Power Conversion eGaN FETs improvements in size and performance compared with…
This article highlights Efficient Power Conversion eGaN FETs improvements in size and performance compared with equivalently Silicon power MOSFETs.
This article highlights ROHM power supply monitoring IC, the BD39040MUF-C, with BIST (Built-In Self Test) that supports…
This article highlights ROHM power supply monitoring IC, the BD39040MUF-C, with BIST (Built-In Self Test) that supports functional safety.
This article highlights Infineon 1EDI60I12AF gate-driver ICs that offers reductions of the turn-ON energy Eon up to 25%…
This article highlights Infineon 1EDI60I12AF gate-driver ICs that offers reductions of the turn-ON energy Eon up to 25% with enforced sourcing is…