Through the partnership between STMicroelectronics (ST) and Sanken Electric, a new family of intelligent power modules (IPMs) to simplify HVAC…
Through the partnership between STMicroelectronics (ST) and Sanken Electric, a new family of intelligent power modules (IPMs) to simplify HVAC…
At the Swiss Federal Institute of Technology (EPFL), microfluidic based cooling of Integrated Circuits show an incredible…
At the Swiss Federal Institute of Technology (EPFL), microfluidic based cooling of Integrated Circuits show an incredible upside to the future of…
This article highlights EPC 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more…
This article highlights EPC 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more efficient, more reliable,…
Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active…
Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active power management, and…
The new MinE-Cap IC enables engineers to employ physically smaller filter capacitors without increasing output ripple or…
The new MinE-Cap IC enables engineers to employ physically smaller filter capacitors without increasing output ripple or decreasing operating…
The biennial electronica conference is returning this year for an all-digital event held Nov. 9 through Nov. 12.
The biennial electronica conference is returning this year for an all-digital event held Nov. 9 through Nov. 12.
The new 1200 and 1700 volt Junction Barrier Schottky (JBS) diodes join the company’s 3rd generation of silicon carbide…
The new 1200 and 1700 volt Junction Barrier Schottky (JBS) diodes join the company’s 3rd generation of silicon carbide MPS diodes.
A look at how GAAFETs could replace FinFETs as the technology of choice to keep down size and provide extremely high…
A look at how GAAFETs could replace FinFETs as the technology of choice to keep down size and provide extremely high density for power devices.
Determining the best match between an inductor and an IC is paramount to achieving the best performance in terms of PCB…
Determining the best match between an inductor and an IC is paramount to achieving the best performance in terms of PCB space, as well as thermal…
Silicon to Software company Synopsys has released a new virtual prototyping solution designed to accelerate the…
Silicon to Software company Synopsys has released a new virtual prototyping solution designed to accelerate the development of power electronics…
This article highlights Infineon Technology OptiMOS™ 40 V low-voltage power MOSFET to the market.
This article highlights Infineon Technology OptiMOS™ 40 V low-voltage power MOSFET to the market.
This article highlights Keysight Technologies that overcome the challenges associated with GaN FET dynamic characterization.
This article highlights Keysight Technologies that overcome the challenges associated with GaN FET dynamic characterization.
The modules are fully protected against short-circuit, over-current, over-temperature and input under-voltage and are…
The modules are fully protected against short-circuit, over-current, over-temperature and input under-voltage and are equipped with enable, power…
This article looks at different device configurations of MOSFETs and FinFETs and their evolution. It also discusses how…
This article looks at different device configurations of MOSFETs and FinFETs and their evolution. It also discusses how 3D configuration allows for…
This article explains the generation mechanism of this leakage current along with its path through appropriate circuit diagrams.
This article explains the generation mechanism of this leakage current along with its path through appropriate circuit diagrams.
Microchip releases new generation of Silicon Carbide Schottky Barrier Diode for Automotive Applications.
Microchip releases new generation of Silicon Carbide Schottky Barrier Diode for Automotive Applications.
GaN Systems’ New study illustrates how Gallium Nitride (GaN) stacks up against classical MOSFETs in real-world situations.
GaN Systems’ New study illustrates how Gallium Nitride (GaN) stacks up against classical MOSFETs in real-world situations.
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for…
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for fast switching, wide…
Power electronics company STMicroelectronics is acquiring France-based SOMOS Semiconductor, a power amplifier and RF specialist.
Power electronics company STMicroelectronics is acquiring France-based SOMOS Semiconductor, a power amplifier and RF specialist.
GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.
GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.
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