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GaN Totem-Pole PFC Design Guide and Power Loss Modeling

GaN Totem-Pole PFC Design Guide and Power Loss Modeling


News Oct 11, 2019 by Paul Shepard
200mm Semi-Insulating SiC Substrates for RF Power Amplifiers in 5G Antennas

200mm Semi-Insulating SiC Substrates for RF Power Amplifiers in 5G Antennas


News Oct 11, 2019 by Paul Shepard
ROHM Introduces New 4Pin Package SiC Mosfets

ROHM Introduces New 4Pin Package SiC Mosfets

This article highlights ROHM Semiconductors RV4xxx series development of ultra-compact 1.6x1.6mm size MOSFETs that deliver superior mounting…


new products Oct 10, 2019 by ROHM
Bosch Enters Automotive Silicon Carbide Race

Bosch Enters Automotive Silicon Carbide Race


News Oct 08, 2019 by Paul Shepard
Eval Board for New 4-Pin SiC MOSFETs with Up To 35% Lower Switching Losses

Eval Board for New 4-Pin SiC MOSFETs with Up To 35% Lower Switching Losses


News Oct 08, 2019 by Paul Shepard
Double Pulse Test Software Simplifies Wide Bandgap Power Device Testing

Double Pulse Test Software Simplifies Wide Bandgap Power Device Testing

Tektronix Simplifies Power Efficiency Testing with New Double Pulse Test Software for AFG31000

Tektronix Simplifies Power Efficiency Testing with New Double Pulse Test Software for AFG31000

Tektronix, Inc. today announced the availability of a new software plugin for its AFG31000 Arbitrary/Function Generator that makes it possible to…


new products Oct 08, 2019 by Tektronix
Advancing Gallium-Nitride Microelectronics Technology for the Defense Community

Advancing Gallium-Nitride Microelectronics Technology for the Defense Community


News Oct 05, 2019 by Paul Shepard
WIN Semiconductors Offers Sample Kits for its GaN on SiC 0.15μm-gate Technology

WIN Semiconductors Offers Sample Kits for its GaN on SiC 0.15μm-gate Technology


News Oct 02, 2019 by Paul Shepard
3rd Edition Gallium-Nitride Textbook Focuses on Power Conversion Applications

3rd Edition Gallium-Nitride Textbook Focuses on Power Conversion Applications


News Oct 02, 2019 by Paul Shepard
Dutch Solar Car Team Chooses UnitedSiC Silicon Carbide FET Devices for Global Racing Challenge

Dutch Solar Car Team Chooses UnitedSiC Silicon Carbide FET Devices for Global Racing Challenge

Dutch Solar Car Team Chooses UnitedSiC Silicon Carbide FET Devices for Global Racing Challenge.


Dual Port SiC-Based Fast Charger for Airport Ground Support Operations

Dual Port SiC-Based Fast Charger for Airport Ground Support Operations

EPC Launches 3rd Edition of Gallium Nitride GaN Textbook with Power Conversion Applications Focus

EPC Launches 3rd Edition of Gallium Nitride GaN Textbook with Power Conversion Applications Focus

This features Efficient Power Conversion Corporation (EPC) publication of the third edition of “GaN Transistors for Efficient Power…


new products Oct 01, 2019 by EPC
High Performance GaAs semiconductors from 35PE excel at rapid charging for evehicles

High Performance GaAs semiconductors from 35PE excel at rapid charging for evehicles

This article highlights 35PE High-performance gallium arsenide (GaAs)-based electronics have the potential to help new technologies achieve…


new products Oct 01, 2019 by 35PE
Transphorms 150 m and 240 m 650 V GaN FETs

Transphorms 150 m and 240 m 650 V GaN FETs

This artilcle highlights Transphorm 150 mΩ TP65H150LSG FET and 240 mΩ TP65H300G4LSG FET that are high-voltage and high current density GaN devices.


new products Oct 01, 2019 by Transphorm
100V, 5A Gallium-Nitride-Based Half-Bridge Development Board

100V, 5A Gallium-Nitride-Based Half-Bridge Development Board


News Sep 30, 2019 by Paul Shepard
WIN Semiconductors’ Integrated GaAs Technology Optimized for 5G Front-ends

WIN Semiconductors’ Integrated GaAs Technology Optimized for 5G Front-ends

Capacitors Optimized for Fast Switching Wide Bandgap Semiconductor Designs

Capacitors Optimized for Fast Switching Wide Bandgap Semiconductor Designs

Power Integrations Delivers One-Millionth GaN-Based InnoSwitch3 IC

Power Integrations Delivers One-Millionth GaN-Based InnoSwitch3 IC


News Sep 30, 2019 by Paul Shepard
Mitsubishi Develops Trench-Type SiC-MOSFET with Unique Electric-Field-Limiting Structure

Mitsubishi Develops Trench-Type SiC-MOSFET with Unique Electric-Field-Limiting Structure


News Sep 29, 2019 by Paul Shepard