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Advancing Gallium-Nitride Microelectronics Technology for the Defense Community

Advancing Gallium-Nitride Microelectronics Technology for the Defense Community

News Oct 05, 2019 by Paul Shepard
WIN Semiconductors Offers Sample Kits for its GaN on SiC 0.15μm-gate Technology

WIN Semiconductors Offers Sample Kits for its GaN on SiC 0.15μm-gate Technology

News Oct 02, 2019 by Paul Shepard
3rd Edition Gallium-Nitride Textbook Focuses on Power Conversion Applications

3rd Edition Gallium-Nitride Textbook Focuses on Power Conversion Applications

News Oct 02, 2019 by Paul Shepard
Dutch Solar Car Team Chooses UnitedSiC Silicon Carbide FET Devices for Global Racing Challenge

Dutch Solar Car Team Chooses UnitedSiC Silicon Carbide FET Devices for Global Racing Challenge

Dutch Solar Car Team Chooses UnitedSiC Silicon Carbide FET Devices for Global Racing Challenge.

new products Oct 02, 2019 by United Silicon Carbide
Dual Port SiC-Based Fast Charger for Airport Ground Support Operations

Dual Port SiC-Based Fast Charger for Airport Ground Support Operations

new products Oct 01, 2019 by Paul Shepard
EPC Launches 3rd Edition of Gallium Nitride GaN Textbook with Power Conversion Applications Focus

EPC Launches 3rd Edition of Gallium Nitride GaN Textbook with Power Conversion Applications Focus

This features Efficient Power Conversion Corporation (EPC) publication of the third edition of “GaN Transistors for Efficient Power…

new products Oct 01, 2019 by EPC
High Performance GaAs semiconductors from 35PE excel at rapid charging for evehicles

High Performance GaAs semiconductors from 35PE excel at rapid charging for evehicles

This article highlights 35PE High-performance gallium arsenide (GaAs)-based electronics have the potential to help new technologies achieve…

new products Oct 01, 2019 by 35PE
Transphorms 150 m and 240 m 650 V GaN FETs

Transphorms 150 m and 240 m 650 V GaN FETs

This artilcle highlights Transphorm 150 mΩ TP65H150LSG FET and 240 mΩ TP65H300G4LSG FET that are high-voltage and high current density GaN devices.

new products Oct 01, 2019 by Transphorm
100V, 5A Gallium-Nitride-Based Half-Bridge Development Board

100V, 5A Gallium-Nitride-Based Half-Bridge Development Board

News Sep 30, 2019 by Paul Shepard
WIN Semiconductors’ Integrated GaAs Technology Optimized for 5G Front-ends

WIN Semiconductors’ Integrated GaAs Technology Optimized for 5G Front-ends

new products Sep 30, 2019 by Paul Shepard
Capacitors Optimized for Fast Switching Wide Bandgap Semiconductor Designs

Capacitors Optimized for Fast Switching Wide Bandgap Semiconductor Designs

new products Sep 30, 2019 by Paul Shepard
Power Integrations Delivers One-Millionth GaN-Based InnoSwitch3 IC

Power Integrations Delivers One-Millionth GaN-Based InnoSwitch3 IC

News Sep 30, 2019 by Paul Shepard
Mitsubishi Develops Trench-Type SiC-MOSFET with Unique Electric-Field-Limiting Structure

Mitsubishi Develops Trench-Type SiC-MOSFET with Unique Electric-Field-Limiting Structure

News Sep 29, 2019 by Paul Shepard
SiC to Enable 1MW Inverter in the Size of a Compact Suitcase

SiC to Enable 1MW Inverter in the Size of a Compact Suitcase

News Sep 27, 2019 by Paul Shepard
Gallium Nitride Discovery Aims for Efficient P-Type GaN Transistors

Gallium Nitride Discovery Aims for Efficient P-Type GaN Transistors

News Sep 26, 2019 by Paul Shepard
10kW Bi-Directional, Dual Active Bridge Reference Design with SiC MOSFETs

10kW Bi-Directional, Dual Active Bridge Reference Design with SiC MOSFETs

News Sep 25, 2019 by Paul Shepard
A High Temperature Gate Driver for Half Bridge SiC MOSFET 62mm Power Modules

A High Temperature Gate Driver for Half Bridge SiC MOSFET 62mm Power Modules

This article features CISSOID CMT-TIT8243 high temperature high voltage isolated Gate Driver for 62mm SiC MOSFET power modules with High peak gate…

Technical Articles Sep 25, 2019 by Pierre Delatte
Cree to Establish SiC Corridor on the East Coast of the United States

Cree to Establish SiC Corridor on the East Coast of the United States

News Sep 23, 2019 by Paul Shepard
Cree Announces Plan to Build World’s Largest SiC Device Manufacturing Facility in New York

Cree Announces Plan to Build World’s Largest SiC Device Manufacturing Facility in New York

Cree the global leader in silicon carbide (SiC) technology, today announced plans to establish a silicon carbide corridor in New York with the…

new products Sep 23, 2019 by Cree
OPPO Employs GaN MOSFETs in Three New Flash Charge Technologies

OPPO Employs GaN MOSFETs in Three New Flash Charge Technologies

News Sep 19, 2019 by Paul Shepard