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WIN Semiconductors’ Integrated GaAs Technology Optimized for 5G Front-ends

October 01, 2019 by Paul Shepard

WIN Semiconductors Corp has combined an advanced 100GHz ƒt enhancement-mode pHEMT with monolithic PIN and Schottky diodes to provide best-in-class mmWave performance for all front-end functions. The PIH1-10 platform is designed for single chip 5G front ends operating in the 24GHz to 45GHz bands.

The innovative PIH-10 technology provides a new set of integrated GaAs solutions that improve mmWave front end performance. High efficiency Ka-band GaAs power amplifiers, LNAs and low loss switches on a compact single chip front-end will enhance the user experience through improved battery life and better 5G mmWave coverage.

Integrated GaAs front-ends can also be used in mmWave access points, and the higher Tx power and efficiency of PIH1-10 enables smaller active antenna arrays with lower total power consumption than existing RAN hardware.

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The core of PIH1-10 is an E-Mode pHEMT that provides the gain, power density and efficiency for mmWave transmit power amplifiers, and the noise performance needed in the receive LNA. This versatile single supply transistor can support Tx power levels of 30dBm and Rx noise figure of 2.5dB at mmWave frequencies.

Furthermore, the integrated PIN diode provides excellent mmWave Tx/Rx switch functionality with <1dB insertion loss, enabling monolithic integration of all front-end functions on a single chip.

"GaAs technology outperforms BiCMOS in every front-end function, and mmWave single-chip front ends realized in PIH1-10 can reduce array power consumption, simplify thermal management, and extend battery life in 5G user equipment while reducing total cost of ownership for mmWave network access points," said David Danzilio, Senior Vice President of WIN Semiconductors Corp.

"In addition, the higher performance integrated GaAs front-ends provide flexible mmWave active antenna solutions to support multiple deployment scenarios," Danzilio concluded.