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Transphorms 150 m and 240 m 650 V GaN FETs

Transphorms 150 m and 240 m 650 V GaN FETs

This artilcle highlights Transphorm 150 mΩ TP65H150LSG FET and 240 mΩ TP65H300G4LSG FET that are high-voltage and high current density GaN devices.

new products Oct 01, 2019 by Transphorm
100V, 5A Gallium-Nitride-Based Half-Bridge Development Board

100V, 5A Gallium-Nitride-Based Half-Bridge Development Board

News Sep 30, 2019 by Paul Shepard
WIN Semiconductors’ Integrated GaAs Technology Optimized for 5G Front-ends

WIN Semiconductors’ Integrated GaAs Technology Optimized for 5G Front-ends

new products Sep 30, 2019 by Paul Shepard
Capacitors Optimized for Fast Switching Wide Bandgap Semiconductor Designs

Capacitors Optimized for Fast Switching Wide Bandgap Semiconductor Designs

new products Sep 30, 2019 by Paul Shepard
Power Integrations Delivers One-Millionth GaN-Based InnoSwitch3 IC

Power Integrations Delivers One-Millionth GaN-Based InnoSwitch3 IC

News Sep 30, 2019 by Paul Shepard
Mitsubishi Develops Trench-Type SiC-MOSFET with Unique Electric-Field-Limiting Structure

Mitsubishi Develops Trench-Type SiC-MOSFET with Unique Electric-Field-Limiting Structure

News Sep 29, 2019 by Paul Shepard
SiC to Enable 1MW Inverter in the Size of a Compact Suitcase

SiC to Enable 1MW Inverter in the Size of a Compact Suitcase

News Sep 27, 2019 by Paul Shepard
Gallium Nitride Discovery Aims for Efficient P-Type GaN Transistors

Gallium Nitride Discovery Aims for Efficient P-Type GaN Transistors

News Sep 26, 2019 by Paul Shepard
10kW Bi-Directional, Dual Active Bridge Reference Design with SiC MOSFETs

10kW Bi-Directional, Dual Active Bridge Reference Design with SiC MOSFETs

News Sep 25, 2019 by Paul Shepard
A High Temperature Gate Driver for Half Bridge SiC MOSFET 62mm Power Modules

A High Temperature Gate Driver for Half Bridge SiC MOSFET 62mm Power Modules

This article features CISSOID CMT-TIT8243 high temperature high voltage isolated Gate Driver for 62mm SiC MOSFET power modules with High peak gate…

Technical Articles Sep 25, 2019 by Pierre Delatte
Cree to Establish SiC Corridor on the East Coast of the United States

Cree to Establish SiC Corridor on the East Coast of the United States

News Sep 23, 2019 by Paul Shepard
Cree Announces Plan to Build World’s Largest SiC Device Manufacturing Facility in New York

Cree Announces Plan to Build World’s Largest SiC Device Manufacturing Facility in New York

Cree the global leader in silicon carbide (SiC) technology, today announced plans to establish a silicon carbide corridor in New York with the…

new products Sep 23, 2019 by Cree
OPPO Employs GaN MOSFETs in Three New Flash Charge Technologies

OPPO Employs GaN MOSFETs in Three New Flash Charge Technologies

News Sep 19, 2019 by Paul Shepard
3-Phase, 1.25kW, 200Vac GaN Inverter Reference Design for Integrated Drives

3-Phase, 1.25kW, 200Vac GaN Inverter Reference Design for Integrated Drives

News Sep 17, 2019 by Paul Shepard
650V / 72mΩ GaN FETs in a PQFN88 Package

650V / 72mΩ GaN FETs in a PQFN88 Package

new products Sep 16, 2019 by Paul Shepard
FPGA-Based Inverter Modules use Custom SiC MOSFETs to Power Electric Racing Car

FPGA-Based Inverter Modules use Custom SiC MOSFETs to Power Electric Racing Car

News Sep 14, 2019 by Paul Shepard
1.2kW GaN FET Half-Bridge Synchronous Buck or Boost Evaluation Board

1.2kW GaN FET Half-Bridge Synchronous Buck or Boost Evaluation Board

News Sep 12, 2019 by Paul Shepard
Delphi and Cree Partner on 800V SiC Inverter to Cut EV Charging Time in Half

Delphi and Cree Partner on 800V SiC Inverter to Cut EV Charging Time in Half

News Sep 11, 2019 by Paul Shepard
DuPont Electronics & Imaging Divests SiC Wafer Business to SK Siltron

DuPont Electronics & Imaging Divests SiC Wafer Business to SK Siltron

News Sep 10, 2019 by Paul Shepard
STMicroelectronics to Supply Advanced Silicon-Carbide Power Electronics to Renault-Nissan-Mitsubishi for High-Speed Battery Charging in Next-Generation Electric Vehicles

STMicroelectronics to Supply Advanced Silicon-Carbide Power Electronics to Renault-Nissan-Mitsubishi for High-Speed Battery Charging in Next-Generation Electric Vehicles

This article highlights STMicroelectronics to Supply Advanced Silicon-Carbide Power Electronics to Renault-Nissan-Mitsubishi (Alliance) for battery…

new products Sep 09, 2019 by STMicroelectronics