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Siemens Adds Low-Voltage Servo Drives with GaN Systems Power Transistors

Siemens Adds Low-Voltage Servo Drives with GaN Systems Power Transistors

News Jan 21, 2020 by Paul Shepard
MOSHEMT— Innovative Transistor Technology Reaches Record Frequencies

MOSHEMT— Innovative Transistor Technology Reaches Record Frequencies

News Jan 21, 2020 by Paul Shepard
Silicon Carbide Gate Drive Evaluation Platform from Littelfuse

Silicon Carbide Gate Drive Evaluation Platform from Littelfuse

new products Jan 21, 2020 by Paul Shepard
SMA Uses Infineon SiC Devices to Reduce System Costs for Inverters

SMA Uses Infineon SiC Devices to Reduce System Costs for Inverters

News Jan 20, 2020 by Paul Shepard
ROHM Group Company SiCrystal and STMicroelectronics Announce MultiYear Silicon Carbide Wafer Supply Agreement

ROHM Group Company SiCrystal and STMicroelectronics Announce MultiYear Silicon Carbide Wafer Supply Agreement

This article features STMicroelectronics agreement for multi-year SiC wafers supply with SiCrystal, a ROHM group company with share of SiC wafers…

News Jan 16, 2020 by ROHM
GaN Systems Captures a Place in the 2020 Global Cleantech 100

GaN Systems Captures a Place in the 2020 Global Cleantech 100

GaN Systems Captures a Place in the 2020 Global Cleantech 100.

new products Jan 16, 2020 by GaN Systems
SiCrystal and STMicro Pen Multi-Year SiC Wafer Supply Agreement

SiCrystal and STMicro Pen Multi-Year SiC Wafer Supply Agreement

News Jan 15, 2020 by Paul Shepard
MOSHEMT Innovative Transistor Technology Reaches Record Frequencies

MOSHEMT Innovative Transistor Technology Reaches Record Frequencies

This article highlights Fraunhofer IAF a success in developing a novel type of transistor with extremely high cut-off frequencies, the MOSHEMTs.

new products Jan 14, 2020 by Fraunhofer IAF
CISSOID delivers Robust Gate Drivers for Wolfspeed XM3 Fast Switching SiC Power Modules

CISSOID delivers Robust Gate Drivers for Wolfspeed XM3 Fast Switching SiC Power Modules

This article highlights CISSOID CMT-TIT0697 Gate Driver board esigned to be directly mounted on CAB450M12XM3 1200V/450A SiC MOSFET Power Modules.

new products Jan 14, 2020 by CISSOID
Partnering in SiC MOSFETS to Deliver Automotive and Industrial Solutions

Partnering in SiC MOSFETS to Deliver Automotive and Industrial Solutions

An interview with Dr. Rainer Käsmaier about SiC-based products in the rapidly growing power semiconductor market.

tech insights Jan 14, 2020 by Roland R. Ackerman
SiC FETs in High-Voltage Input 15W Flyback Aux Power Supply Reference Design

SiC FETs in High-Voltage Input 15W Flyback Aux Power Supply Reference Design

News Jan 13, 2020 by Paul Shepard
600-V 50-mΩ Integrated GaN FET Power Stage with Overcurrent Protection

600-V 50-mΩ Integrated GaN FET Power Stage with Overcurrent Protection

new products Jan 13, 2020 by Paul Shepard
Innolectric 22kW On-Board EV Charger Uses STMicro SiC Devices

Innolectric 22kW On-Board EV Charger Uses STMicro SiC Devices

News Jan 13, 2020 by Paul Shepard
Ultra-low 7-mohm and 9-mohm RDSon SiC FETs for EV Inverters Battery Chargers and Circuit Protection

Ultra-low 7-mohm and 9-mohm RDSon SiC FETs for EV Inverters Battery Chargers and Circuit Protection

This article highlights UnitedSiC UF3SC 7mohm, 650V and a 9mohm, 1200V SiC FETs in a TO247-4L package as combination of Gen 3 SiC JFET and Si MOSFET.

new products Jan 13, 2020 by United Silicon Carbide
Digital Control and GaN HEMTs in 1.2kW Bridgeless Totem-Pole PFC Reference Design

Digital Control and GaN HEMTs in 1.2kW Bridgeless Totem-Pole PFC Reference Design

News Jan 11, 2020 by Paul Shepard
Design and Optimization of Silicon Carbide Schottky Diode

Design and Optimization of Silicon Carbide Schottky Diode

This article highlights WeEn Semiconductors WeEn NXPSC0465 device for design and optimization of Silicon Carbide (SiC) Schottky Diode.

Technical Articles Jan 10, 2020 by Alex Cui
GaN FET Enables Nanosecond Laser Driver Reference Design for LiDAR

GaN FET Enables Nanosecond Laser Driver Reference Design for LiDAR

News Jan 09, 2020 by Paul Shepard
GaN-Based Time-of-Flight Demonstration Board Drives Lasers with 1.2ns Pulses

GaN-Based Time-of-Flight Demonstration Board Drives Lasers with 1.2ns Pulses

new products Jan 09, 2020 by Paul Shepard
High-Voltage GaN Transistors Fabricated using Transmorphic Epitaxial Growth

High-Voltage GaN Transistors Fabricated using Transmorphic Epitaxial Growth

News Jan 08, 2020 by Paul Shepard
AUKEY Uses GaN from Navitas to Design World’s Smallest Chargers

AUKEY Uses GaN from Navitas to Design World’s Smallest Chargers

new products Jan 07, 2020 by Paul Shepard