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Teledyne e2v HiRel and GaN Systems Unveil High Reliability 650V/60A GaN Power HEMT

Teledyne e2v HiRel and GaN Systems Unveil High Reliability 650V/60A GaN Power HEMT

300W Adapter Reference Design from GaN Systems and ON Semiconductor Highlights GaN Innovation and Performance in Consumer Devices

300W Adapter Reference Design from GaN Systems and ON Semiconductor Highlights GaN Innovation and Performance in Consumer Devices

New solution is ideal for high efficiency, ultra-high power density adapter applications for televisions, gaming notebooks and consoles, and…


new products Dec 19, 2019 by GaN Systems
Silicon-Carbide Enables Second-Generation Digital Circuit Breaker

Silicon-Carbide Enables Second-Generation Digital Circuit Breaker

GaN Systems and SPARX Advance Gallium Nitride in Electric Vehicles

GaN Systems and SPARX Advance Gallium Nitride in Electric Vehicles


News Dec 18, 2019 by Paul Shepard
500W and 1200W Aviation SMPS Feature Transphorm GaN Power Devices

500W and 1200W Aviation SMPS Feature Transphorm GaN Power Devices

GaN Systems and SPARX Advance GaN in Electric Vehicles

GaN Systems and SPARX Advance GaN in Electric Vehicles

GaN Systems and SPARX Advance GaN in Electric Vehicles.


new products Dec 18, 2019 by GaN Systems
Innovative Power Capacitor Technologies Support SiC and GaN in DC Link

Innovative Power Capacitor Technologies Support SiC and GaN in DC Link

At its annual Technologies & Products Press Conference 2019 in Munich, TDK managers Dr. Lucia Cabo and Fernando Rodríguez presented film…


Isolated Silicon-Carbide Gate Drivers Improve Efficiency and System Uptime

Isolated Silicon-Carbide Gate Drivers Improve Efficiency and System Uptime

New Heat Model May Help Gallium-Nitride Power Devices Last Longer

New Heat Model May Help Gallium-Nitride Power Devices Last Longer


News Dec 17, 2019 by Paul Shepard
Maxim’s Isolated Silicon Carbide Gate Driver Reduces Energy Loss by 30 Percent Improves System Uptime

Maxim’s Isolated Silicon Carbide Gate Driver Reduces Energy Loss by 30 Percent Improves System Uptime

Maxim’s Isolated Silicon Carbide Gate Driver Reduces Energy Loss by 30 Percent, Improves System Uptime.


IVWorks Raises $6.7 Million for AI-Based Gallium-Nitride Epi Technology

IVWorks Raises $6.7 Million for AI-Based Gallium-Nitride Epi Technology


News Dec 16, 2019 by Paul Shepard
GaN-HEMTs Handle up to 100W for SATCOM Earth Stations

GaN-HEMTs Handle up to 100W for SATCOM Earth Stations

Automotive Qualified 15V Gallium Nitride Transistor

Automotive Qualified 15V Gallium Nitride Transistor

This article highlights EPC 15 V, 26 mΩ, eGaN FET with a 28 A pulsed current rating that is perfectly suited to use for firing the lasers in lidar…


new products Dec 13, 2019 by EPC
SiC-Based 30kW Programmable DC Load Returns 95% of Power to Grid

SiC-Based 30kW Programmable DC Load Returns 95% of Power to Grid

200W AC-DC Power Supply with GaN Switching is 2.5-X Smaller

200W AC-DC Power Supply with GaN Switching is 2.5-X Smaller

Powder Cores Provide Lowest Losses at High Frequencies for GaN and SiC Converters

Powder Cores Provide Lowest Losses at High Frequencies for GaN and SiC Converters

GaN Power IC – 150W AC-DC PFC + LLC Demo Board

GaN Power IC – 150W AC-DC PFC + LLC Demo Board


News Dec 10, 2019 by Paul Shepard
A GaN Systems Report The 2020 Top Technology Trends in Power

A GaN Systems Report The 2020 Top Technology Trends in Power

A GaN Systems Report: The 2020 Top Technology Trends in Power.


new products Dec 10, 2019 by GaN Systems
II-VI Inc Pens Multiyear Agreement Over $100M to Supply SiC Substrates

II-VI Inc Pens Multiyear Agreement Over $100M to Supply SiC Substrates


News Dec 07, 2019 by Paul Shepard
Diamond Film on GaN HEMTs Reduce Heat by 40% & Enable Smaller Systems

Diamond Film on GaN HEMTs Reduce Heat by 40% & Enable Smaller Systems


News Dec 06, 2019 by Paul Shepard