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Efficient Power Conversion Corp. Expands eGaN FET Family with Second Generation 100V, 30 milliohm Power Transistor

Efficient Power Conversion Corp. Expands eGaN FET Family with Second Generation 100V, 30 milliohm Power Transistor

Efficient Power Conversion Introduces Development Board for Systems Using Enhancement Mode Gallium Nitride FETs

Efficient Power Conversion Introduces Development Board for Systems Using Enhancement Mode Gallium Nitride FETs

GaN, SiC, Digital Power, PwrSiP, Wireless Charging and More at DPF ’11

GaN, SiC, Digital Power, PwrSiP, Wireless Charging and More at DPF ’11


News Aug 25, 2011 by Jeff Shepard
EPC Expands Family of Enhancement Mode Gallium Nitride FETs with 200V, 100 Milliohm Power Transistor

EPC Expands Family of Enhancement Mode Gallium Nitride FETs with 200V, 100 Milliohm Power Transistor

Siltronic AG Joins imec GaN-on-Si Research Program

Siltronic AG Joins imec GaN-on-Si Research Program


News Jun 30, 2011 by Jeff Shepard
Cree Releases 1200V Family of Silicon Carbide Schottky Diodes for Power Conversion Applications

Cree Releases 1200V Family of Silicon Carbide Schottky Diodes for Power Conversion Applications

National Semiconductor Introduces First 100V Half-bridge Gate Driver for Enhancement-mode Gallium-Nitride Power FETs

National Semiconductor Introduces First 100V Half-bridge Gate Driver for Enhancement-mode Gallium-Nitride Power FETs

Imec Processes First Power Devices on 200mm CMOS-Compatible GaN-on-Si

Imec Processes First Power Devices on 200mm CMOS-Compatible GaN-on-Si


News May 25, 2011 by Jeff Shepard
Cree Provides SiC MOSFET Energy Conservation to 3-10kW Solar, Power Supply and Motor Drive Applications

Cree Provides SiC MOSFET Energy Conservation to 3-10kW Solar, Power Supply and Motor Drive Applications

SiC Devices Intro’d at PCIM Europe

SiC Devices Intro’d at PCIM Europe

Cree Announces Signing of a Global SiC Materials License Agreement with Nippon Steel

Cree Announces Signing of a Global SiC Materials License Agreement with Nippon Steel


News Apr 25, 2011 by Jeff Shepard
Fairchild Acquires Silicon Carbide Company TranSiC

Fairchild Acquires Silicon Carbide Company TranSiC


News Apr 14, 2011 by Jeff Shepard
ROHM Introduces New Silicon Carbide Schottky Diodes

ROHM Introduces New Silicon Carbide Schottky Diodes

Darnell Exclusive: GaN Development on Target at IR

Darnell Exclusive: GaN Development on Target at IR


News Mar 16, 2011 by Jeff Shepard
Cree Launches First Surface Mount 1200V Silicon Carbide Schottky Diode

Cree Launches First Surface Mount 1200V Silicon Carbide Schottky Diode

Semi South Now Shipping High Power SiC JFETs in Commercial Quantities

Semi South Now Shipping High Power SiC JFETs in Commercial Quantities


News Feb 28, 2011 by Jeff Shepard
STMico Boosts Bipolar Power Transistor Current Capability by 50 Percent

STMico Boosts Bipolar Power Transistor Current Capability by 50 Percent

Transphorm Emerges from Stealth with New Approach to GaN Technology

Transphorm Emerges from Stealth with New Approach to GaN Technology


News Feb 24, 2011 by Jeff Shepard
New Technique Boosts High-Power Potential For Gallium Nitride Electronics

New Technique Boosts High-Power Potential For Gallium Nitride Electronics


News Feb 14, 2011 by Jeff Shepard
Dow Corning Joins the imec GaN Affiliation Program

Dow Corning Joins the imec GaN Affiliation Program


News Jan 20, 2011 by Jeff Shepard