Powerex Introduces Low Profile Split Dual Si/SiC Hybrid IGBT Modules Featuring Multiple Circuit Topologies

Combining the NFH-Series Powerex IGBT, which the company says is still the industry’s fastest power IGBT, with a Zero Recovery® Schottky diode, Powerex is now offering split dual Si/SiC hybrid IGBT modules (QID1210005 and QID1210006) designed for use in high frequency applications: upwards of 30kHz for hard switching applications and 60 to 80 kHz for soft switching applications.

Each module consists of two IGBT transistors, with each transistor having a reverse-connected Zero Recovery free-wheel silicon carbide Schottky diode. A 30% decrease in switching losses result from this innovative design. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

QID1210005 and QID1210006 boast a very low profile and can be easily reconfigured. In total, five different configurations are possible: independent; as a dual; in parallel; common collector; and common emitter.

These hybrid modules can be used in applications, including: energy saving power systems, such as fans, pumps and consumer appliances; high frequency type power systems, such as UPS, high speed motor drives, induction heating, welder and robotics; and high temperature power systems, such as power electronics in electric vehicle and aviation systems.

Standard Powerex NFH gate drivers can be used with the split dual Si/SiC Hybrid IGBT modules.

The QID1210005 can be purchased at sample pricing at $460 each. The QID1210006 can be purchased at sample pricing at $573 each.