Efficient Power Conversion Corp. Expands eGaN FET Family with Second Generation 100V, 30 milliohm Power Transistor

Efficient Power Conversion Corp. (EPC) announced the introduction of the EPC2007 as the newest member of EPC’s second-generation enhanced performance eGaN FET family. The EPC2007 is environmentally friendly; being lead free, RoHS-compliant (Restriction of Hazardous Substances), and halogen free.

The EPC2007 FET is a 1.87 mm², 100 VDS, 6A device with a maximum RDS(ON) of 30mΩ. This second generation eGaN FET provides significant performance advantages over the first-generation EPC1007 eGaN device. The EPC2007 is fully enhanced at a lower gate voltage and has greater immunity to fast switching transients than the predecessor.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2007 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include hard-switched and high frequency circuits such as isolated dc-dc power supplies, point-of-load converters, and class D audio amplifiers.

"With the introduction of the EPC2007 we continue to add to our industry-leading eGaN FET portfolio providing power design engineers the opportunity to increase efficiency and reduce size of their power conversion systems when compared with silicon-based MOSFETs," noted Alex Lidow, co-founder and CEO.

In 1k piece quantities, the EPC2007 is priced at $1.31 and is immediately available through Digi-Key.