EEPower

SiC Devices Intro’d at PCIM Europe


New Products May 19, 2011 by Jeff Shepard

Although the pace and breadth of the introductions were both less compared with last year’s event, SemiSouth Laboratories, the Transic division of Fairchild Semiconductor and Vincotech all announced a combination of SiC diodes, modules and transistors at this year’s PCIM Europe.

SemiSouth launched its SDP60S120D 1,200V, 60A SiC power Schottky diode, claimed to deliver the highest continuous forward current of any SiC diode (measured at a Tc of 145°C). The new device has a Qc of 260 nC and an operating temperature range of -55 to +175°C. This Schottky device offers a positive temperature coefficient for easier paralleling and temperature-independent switching characteristics and also has a zero reverse recovery current and zero forward recovery voltage.

"Our new 60A device enables users to replace three paralleled 20A parts, reducing power dissipation by over 12%, as well as saving space and cost," Dieter Liesabeths, SemiSouth’s Director of Sales commented.

The TranSiC division of Fairchild introduced two new devices in its BitSiC line of SiC bipolar power transistors. In the high-efficiency product line, current-handling capabilities were extended up to 40A for a 1,200V power transistor. With an on-resistance of 25mΩ and a switching speed of 20 nsec, these devices are targeted at photovoltaic inverters, welding systems, aerospace systems, motor drives, PFC input stages and similar applications.

In the company’s high-temperature offering, TranSiC added 6 and 12A 1,200V devices rated for a junction temperature of 250°C. These high-temperature power transistors offer a saturation voltage of 1V at a junction temperature of 250°C and a switching time of 20-30 nsec. The transistors are packaged in a high-temperature version of the TO-258 hermetic standard package.

Vincotech launched the first standard power modules featuring SemiSouth normally-on SiC JFETs. Targeted at solar inverters and similar applications up to 30kW, these new modules feature a 1,200V dual booster input stage and a 1,200V NMPC inverter stage housed in the company’s flow0 package with a height of 12mm.

The on-board, high-frequency DC-link capacitors enhance fast-switching, low-inductance designs and help minimize voltage overshoots. The MNPC topology has been implemented with split outputs to achieve optimal efficiency and high cross-through conduction immunity.