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3rd Gen SiC SBDs, Full SiC Modules, and Arduino Shield for Stepper Motors

3rd Gen SiC SBDs, Full SiC Modules, and Arduino Shield for Stepper Motors

Gallium Nitride to Supplant Silicon in Integrated Circuits

Gallium Nitride to Supplant Silicon in Integrated Circuits


News Apr 07, 2016 by Jeff Shepard
SiC-based Analog Op Amp with Temperature Gain of 200 at 400 C

SiC-based Analog Op Amp with Temperature Gain of 200 at 400 C

$13.5M for Large-Diameter SiC Substrates for SiC and GaN Devices

$13.5M for Large-Diameter SiC Substrates for SiC and GaN Devices


News Apr 05, 2016 by Jeff Shepard
GaAs Power Conversion coming from ams and Sarda

GaAs Power Conversion coming from ams and Sarda


News Apr 04, 2016 by Jeff Shepard
Is Only Full SiC the “Real“ SiC?

Is Only Full SiC the “Real“ SiC?

Whenever we talk about Silicon Carbide and its applications, our thoughts jump to Silicon Carbide MOSFET power modules, the so called “Full…


The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

This article highlights Infineon Technologies AG Silicon Carbide transistors development for industrial power electronics applications and the goal…


15MHz GaN Half-Bridge Development Boards

15MHz GaN Half-Bridge Development Boards


News Mar 30, 2016 by Jeff Shepard
System Solution: “SiC-Inverter for Industrial Motor Drive”

System Solution: “SiC-Inverter for Industrial Motor Drive”

This article discusses the advantages of Silicon Carbide for industrial motor drive inverters over the silicon counter-part of such devices.


Thermal FOM for Chip-Scale Packaged GaN Transistors

Thermal FOM for Chip-Scale Packaged GaN Transistors

650V GaN FET with 41mOhms On-Resistance in a TO-247

650V GaN FET with 41mOhms On-Resistance in a TO-247

1200V SiC FETs in Gruppo PBM Battery Chargers on Show

1200V SiC FETs in Gruppo PBM Battery Chargers on Show

GE gets $2.1M for SiC Development from U.S. Army

GE gets $2.1M for SiC Development from U.S. Army


News Mar 17, 2016 by Jeff Shepard
Little Box Winner on Display in GaN Systems’ APEC Booth

Little Box Winner on Display in GaN Systems’ APEC Booth

Integration of 650V GaN FETs with Drive and Logic

Integration of 650V GaN FETs with Drive and Logic

17 Billion Field-Device Hours Demonstrate GaN Reliability

17 Billion Field-Device Hours Demonstrate GaN Reliability


News Mar 15, 2016 by Jeff Shepard
1-GHz Optically-Isolated Measurement System for GaN and SiC

1-GHz Optically-Isolated Measurement System for GaN and SiC

Monolith Semi to Demonstrate SiC MOSFETs at APEC

Monolith Semi to Demonstrate SiC MOSFETs at APEC

€1B for GaN-on-Silicon, MEMs, Silicon Photonics Research

€1B for GaN-on-Silicon, MEMs, Silicon Photonics Research


News Mar 13, 2016 by Jeff Shepard
1200V SiC Diode for Rugged High-Frequency Inverters

1200V SiC Diode for Rugged High-Frequency Inverters