17 Billion Field-Device Hours Demonstrate GaN Reliability
Efficient Power Conversion Corp. (EPC) announces its Phase Seven Reliability Report showing the distribution of over 17 billion accumulated field-device hours and detailing test data from more than 7 million equivalent device-hours under stress. The stress tests included intermittent operating life (IOL), early life failure rate (ELFR), humidity with bias, temperature cycling, and electrostatic discharge. The study reports a composite 0.24 FIT rate for products in the field, which is consistent with all of EPC's in situ evaluations to date and validates the readiness of eGaN FETs to supplant their aging silicon cousins for commercial power switching applications.
According to Dr. Alex Lidow, CEO and co-founder of EPC, â€œDemonstration of the reliability of new technology is a major challenge and one that EPC takes very seriously. The results of this study show that EPC gallium-nitride products have the requisite reliability to displace silicon as the technology of choice for semiconductors.â€
For this report, EPCâ€™s eGaN FETs were subjected to a wide variety of stress tests under conditions that are typical for silicon-based power MOSFETs. eGaN FETs were stressed to meet the latest JEDEC standards, when possible. The tests included: High Temperature Reverse Bias (HTRB); High Temperature Gate Bias (HTGB); Temperature Cycling (TC); High Temperature High Humidity Bias (H3TRB); Early Life Failure Rate (ELFR) HTRB; and Intermittent Operating Life (IOL).
|Stress Test||Sample Quantity||Fail Quantity||Equivalent Device (1000 hrs)||Notes|
|HTRB||1754||0||2755.0||VDS = 80% VDS(max)|
|HTGB||1694||0||2695.0||VGS â‰¥ 5.5 V|
|TC||630||0||707.0||First 1000 cycles, âˆ†T â‰¥ 100Â°C|
|ELFR HTRB||5966||0||286.4||First 48 hrs|
EPCâ€™s extensive reliability testing continues to show that the devices are both intrinsically and environmentally reliable. All seven phases of the reliability test program are available online.