EEPower

Latest Wide Bandgap Articles

Categories

Next-Generation Output Transistor Arrays

Next-Generation Output Transistor Arrays

Toshiba Electronics Europe has announced a series of next-generation output transistor arrays that feature a DMOS FET type sink output.

new products Dec 13, 2016 by Toshiba Europe
Infineon Adds GaN Cleanroom in Arizona

Infineon Adds GaN Cleanroom in Arizona

News Dec 04, 2016 by Jeff Shepard
From IGBT to SiC MOSFET A stone step for smooth replacement in Industrial Applications

From IGBT to SiC MOSFET A stone step for smooth replacement in Industrial Applications

This article highlights the advantages of transitioning to SiC MOSFETs from IGBT counterparts in terms of technical and economic aspects.

Technical Articles Nov 24, 2016 by Vladimir Scarpa
GaN used to Design 2.5MHz 3kW Resonant DC-DC

GaN used to Design 2.5MHz 3kW Resonant DC-DC

News Nov 17, 2016 by Jeff Shepard
Fourth-Generation GaAs Solar Cells are 53 Microns Thick

Fourth-Generation GaAs Solar Cells are 53 Microns Thick

News Nov 16, 2016 by Jeff Shepard
Isolated 2A Gate Driver for IGBTs, GaN and SiC

Isolated 2A Gate Driver for IGBTs, GaN and SiC

new products Nov 14, 2016 by Power Pulse1595211359
500V and 700V PLZT Capacitors for Use with GaN and SiC

500V and 700V PLZT Capacitors for Use with GaN and SiC

new products Nov 10, 2016 by Power Pulse1595211359
1200V SiC Trench FETs Reduce RDS(on) by 50%

1200V SiC Trench FETs Reduce RDS(on) by 50%

new products Nov 09, 2016 by Power Pulse1595211359
Miniaturized DC-DCs for IGBT & SiC Gate Drives

Miniaturized DC-DCs for IGBT & SiC Gate Drives

new products Nov 09, 2016 by Power Pulse1595211359
Gen-2 TO-220 650V GaN FET with 72mOhms RDS(on)

Gen-2 TO-220 650V GaN FET with 72mOhms RDS(on)

new products Nov 09, 2016 by Power Pulse1595211359
Wolfspeed Wins 2016 R&D 100 Award for SiC EV Inverter

Wolfspeed Wins 2016 R&D 100 Award for SiC EV Inverter

News Nov 08, 2016 by Jeff Shepard
GaN Transistor Evaluation Platforms

GaN Transistor Evaluation Platforms

News Nov 07, 2016 by Power Pulse1595211359
High-Speed Gate Driver for GaN Power Transistors

High-Speed Gate Driver for GaN Power Transistors

new products Nov 06, 2016 by Power Pulse1595211359
Performance Enhancements from GaN on Display

Performance Enhancements from GaN on Display

News Nov 02, 2016 by Power Pulse1595211359
Panasonic Highlighting GaN, Li-ions, Hybrid Capacitors, and More

Panasonic Highlighting GaN, Li-ions, Hybrid Capacitors, and More

News Nov 02, 2016 by Power Pulse1595211359
High Temperature Power Module for Harsh Environments

High Temperature Power Module for Harsh Environments

Raytheon UK’s Integrated Power Solutions (IPS) business unit in Glenrothes, Scotland, has developed a high temperature, small formfactor bridge…

new products Nov 01, 2016 by Raytheon Technologies
All-SiC High Performance Half-Bridge Power Module and Gate Driver Combination

All-SiC High Performance Half-Bridge Power Module and Gate Driver Combination

Wolfspeed, A Cree Company, and a leading global supplier of silicon carbide (SiC) power products, has introduced the first fully-qualified…

new products Nov 01, 2016 by Wolfspeed
JJPlus and EPC Partner on GaN-Based Wireless Charging

JJPlus and EPC Partner on GaN-Based Wireless Charging

News Oct 25, 2016 by Jeff Shepard
Test Solution Targets SiC and GaN Power Devices up to 3kV

Test Solution Targets SiC and GaN Power Devices up to 3kV

new products Oct 25, 2016 by Jeff Shepard
Raytheon gets $14.9 Million to Advance GaN Technology

Raytheon gets $14.9 Million to Advance GaN Technology

News Oct 18, 2016 by Jeff Shepard