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650V SiC Schottkys Handle 70% More Surge Current

650V SiC Schottkys Handle 70% More Surge Current

new products Jan 12, 2017 by Jeff Shepard
VisIC Raises over $11M for GaN Commercialization

VisIC Raises over $11M for GaN Commercialization

News Jan 11, 2017 by Jeff Shepard
Ultra-Wideband GaN Doherty Power Amplifier

Ultra-Wideband GaN Doherty Power Amplifier

new products Jan 11, 2017 by Jeff Shepard
900V, 10 mOhm SiC MOSFET for EV Drive Trains

900V, 10 mOhm SiC MOSFET for EV Drive Trains

new products Jan 09, 2017 by Jeff Shepard
Looking Back and Forward on 10 Years with GaN Systems

Looking Back and Forward on 10 Years with GaN Systems

Back in the dark days after the internet bubble burst, Nortel had demised, and high tech in Canada’s Silicon Valley North was in the doldrums.…

tech insights Jan 06, 2017 by Girvan Patterson
GaN Enables Wireless Power Modules to Replace Connectors

GaN Enables Wireless Power Modules to Replace Connectors

new products Jan 03, 2017 by Power Pulse1595211359
EPC to Show Applications Enabled by GaN at CES

EPC to Show Applications Enabled by GaN at CES

News Jan 01, 2017 by Power Pulse1595211359
Choice between Si, SiC and GaN Growing in Complexity

Choice between Si, SiC and GaN Growing in Complexity

News Dec 21, 2016 by Jeff Shepard
System Level Impact of GaN in Server Architectures

System Level Impact of GaN in Server Architectures

News Dec 20, 2016 by Jeff Shepard
400V Vertical GaN Transistor Switches 15A in 40ns

400V Vertical GaN Transistor Switches 15A in 40ns

News Dec 19, 2016 by Jeff Shepard
SiC Technology Introduced into Formula E

SiC Technology Introduced into Formula E

ROHM Semiconductor presented its cutting-edge silicon carbide (SiC) technology at the first race of the new 2016/2017 Formula E season in Hong Kong.

new products Dec 19, 2016 by ROHM
Transphorm’s Fully-Packaged GaN FETs Available Through Digi-Key

Transphorm’s Fully-Packaged GaN FETs Available Through Digi-Key

News Dec 15, 2016 by Jeff Shepard
Next-Generation Output Transistor Arrays

Next-Generation Output Transistor Arrays

Toshiba Electronics Europe has announced a series of next-generation output transistor arrays that feature a DMOS FET type sink output.

new products Dec 13, 2016 by Toshiba Europe
Infineon Adds GaN Cleanroom in Arizona

Infineon Adds GaN Cleanroom in Arizona

News Dec 04, 2016 by Jeff Shepard
From IGBT to SiC MOSFET A stone step for smooth replacement in Industrial Applications

From IGBT to SiC MOSFET A stone step for smooth replacement in Industrial Applications

This article highlights the advantages of transitioning to SiC MOSFETs from IGBT counterparts in terms of technical and economic aspects.

Technical Articles Nov 24, 2016 by Vladimir Scarpa
GaN used to Design 2.5MHz 3kW Resonant DC-DC

GaN used to Design 2.5MHz 3kW Resonant DC-DC

News Nov 17, 2016 by Jeff Shepard
Fourth-Generation GaAs Solar Cells are 53 Microns Thick

Fourth-Generation GaAs Solar Cells are 53 Microns Thick

News Nov 16, 2016 by Jeff Shepard
Isolated 2A Gate Driver for IGBTs, GaN and SiC

Isolated 2A Gate Driver for IGBTs, GaN and SiC

new products Nov 14, 2016 by Power Pulse1595211359
500V and 700V PLZT Capacitors for Use with GaN and SiC

500V and 700V PLZT Capacitors for Use with GaN and SiC

new products Nov 10, 2016 by Power Pulse1595211359
1200V SiC Trench FETs Reduce RDS(on) by 50%

1200V SiC Trench FETs Reduce RDS(on) by 50%

new products Nov 09, 2016 by Power Pulse1595211359