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SiC Schottkys in UPSs for North American Data Centers

SiC Schottkys in UPSs for North American Data Centers


News Oct 18, 2016 by Jeff Shepard
Sarda Taps Magwel for GaAs Power Transistor Modeling

Sarda Taps Magwel for GaAs Power Transistor Modeling


News Oct 18, 2016 by Jeff Shepard
The World039s Fastest GaN FET Driver

The World039s Fastest GaN FET Driver

Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, introduces the word’s fastest…


SiC IPM for Aerospace is Aim of CISSOID and DDC Collaboration

SiC IPM for Aerospace is Aim of CISSOID and DDC Collaboration


News Oct 13, 2016 by Jeff Shepard
“Getting the Most from GaN Transistor and IC Chip-scale Packaging” – Webinar

“Getting the Most from GaN Transistor and IC Chip-scale Packaging” – Webinar


News Oct 12, 2016 by Jeff Shepard
SiC Schottky Optimized for High-Efficiency PFC Circuits

SiC Schottky Optimized for High-Efficiency PFC Circuits

New Way of Making LEDs may Improve GaN Power Devices

New Way of Making LEDs may Improve GaN Power Devices


News Oct 11, 2016 by Jeff Shepard
High-Precision Power Measurement of SiC Inverters

High-Precision Power Measurement of SiC Inverters

This article introduced important considerations that come into play when measuring the efficiency and loss of inverters and motors.


ROHM Introduces SiC Technology into Formula E

ROHM Introduces SiC Technology into Formula E


News Oct 10, 2016 by Jeff Shepard
AgileSwitch to be Awarded Patent for SiC Module Switching

AgileSwitch to be Awarded Patent for SiC Module Switching


News Oct 09, 2016 by Jeff Shepard
X-FAB to Provide High-Volume 6-Inch SiC Foundry

X-FAB to Provide High-Volume 6-Inch SiC Foundry


News Oct 09, 2016 by Jeff Shepard
1000V / 65mOhm SiC MOSFET

1000V / 65mOhm SiC MOSFET

Wide Bandgap Now

Wide Bandgap Now

Five years ago, in this column, I wrote an editorial entitled, “When Wide Bandgap?”  In that piece, I predicted, “The key to success in silicon


tech insights Oct 03, 2016 by Dan Kinzer
Silicon Carbide Reduces EV Inverter Losses by Two-Thirds

Silicon Carbide Reduces EV Inverter Losses by Two-Thirds


News Sep 29, 2016 by Jeff Shepard
High-Isolation SiC Gate Drivers

High-Isolation SiC Gate Drivers

59-mOhm 1200V SiC MOSFET Rated for 65 Amps

59-mOhm 1200V SiC MOSFET Rated for 65 Amps

e2v and GaN Systems Sign Master Supply Agreement for A&D Markets

e2v and GaN Systems Sign Master Supply Agreement for A&D Markets


News Sep 26, 2016 by Jeff Shepard
Full SiC 1500V PV Inverters are 99% Efficient

Full SiC 1500V PV Inverters are 99% Efficient

Highest Power L-Band Radar GaN HEMT

Highest Power L-Band Radar GaN HEMT

1200V / 0.04Ω GaN Switches with integral ISO-DRIVER

1200V / 0.04Ω GaN Switches with integral ISO-DRIVER