Alta Devices will roll out their fourth generation (Gen4) product line in early 2017. Compared with current Gen3 devices which deliver 1400 W/kg and are 110 microns thick, Gen4 devices will be 53 microns thick and deliver 2300 W/kg. As a result of the thinner GaAs cells, Gen4 PET modules will also be thinner, 100 microns, compared with the 165 micron thickness of Gen3 PET modules.
Other characteristics and specifications will be maintained in Gen4 cells including: Power-to-Area of 260 W/m2 (24 W/ft2); Weight-to-Area of 170 g/m2 (0.56 oz/ft2): Efficiency of 28.8% for single-junction devices and efficiency of 31.6% for dual-junction devices; Power per Single Cell of 0.226 W; Voltage per Single Cell: Voc (Vmp) of 1.09V (0.96V); Current per Single Cell of Isc (Imp) 0.236A (0.246A); and Flexibility of 2 cm (0.8 in) radius of curvature.
Gen4 represents a 30% reduction in mass resulting in an areal density of 170 g/m2 unencapulated. Alta Devices also expects to introduce several performance improvements that will result in a more efficient and reliable product. Along with a unique interconnect process, Alta Devices will provide customers with the best power-to-weight and power-to-area combination available on the market.
While Gen4 represents a significant performance increase, it also will allow Alta Devices to achieve its rated capacity in Sunnyvale, California. Ultimately, allowing costs to decrease significantly to further disrupt traditional solar technologies. Alta Devices cost goal is to match the cost per watt of silicon-based solar cells within 3 to 5 years.
