This article highlights Transphorm Inc. introduction of its second 900 V FET, the Gen III TP90H050WS, enhancing the…
This article highlights Transphorm Inc. introduction of its second 900 V FET, the Gen III TP90H050WS, enhancing the industry’s only 900 V GaN…
This article highlights UnitedSiC UF3C120150K4S 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin…
This article highlights UnitedSiC UF3C120150K4S 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin Sense discrete package option.
This article highlights Efficient Power Conversion eGaN FETs improvements in size and performance compared with…
This article highlights Efficient Power Conversion eGaN FETs improvements in size and performance compared with equivalently Silicon power MOSFETs.
This article highlights ROHM power supply monitoring IC, the BD39040MUF-C, with BIST (Built-In Self Test) that supports…
This article highlights ROHM power supply monitoring IC, the BD39040MUF-C, with BIST (Built-In Self Test) that supports functional safety.
This article highlights Microchip’s 700V SiC MOSFETs, and 700V and 1200V SiC Schottky Barrier Diodes (SBDs) join its…
This article highlights Microchip’s 700V SiC MOSFETs, and 700V and 1200V SiC Schottky Barrier Diodes (SBDs) join its existing portfolio of SiC…