IGBT Modules Increase Efficiency in TIG Welding Machines

Vishay Intertechnology, Inc. today introduced four new half-bridge and single-switch IGBT power modules designed specifically for TIG welding machines. Built on Vishay's proprietary Trench PT IGBT technology, the VS-GP100TS60SFPbF, VS-GP250SA60S, VS-GP300TD60S, and VS-GP400TD60S provide extremely low collector-to-emitter voltages down to 1.10 V and turn-off switching energy down to 11 mJ for output inverter stages.

With their Trench PT IGBT construction, the Vishay Semiconductors devices released today achieve a smaller size than planar IGBTs, providing designers with higher current density and lower thermal resistance (junction-to-case) without compromising on performance. The devices' low collector-to-emitter voltage enables extremely low conduction losses, while their turn-off switching energy is 50 % lower than previous-generation devices for increased efficiency and long-term reliability.

The half-bridge VS-GP100TS60SFPbF, VS-GP300TD60S, and VS-GP400TD60S combine Trench PT IGBTs with HEXFRED® and FRED Pt® anti-parallel diodes in the INT-A-PAK package and dual INT-A-PAK package with an extremely low profile of 17mm. The single-switch VS-GP250SA60S features the SOT-227 package, provides very low stray inductance of ≤ 5nH typical, and is UL-approved file E78996.

The RoHS-compliant modules feature operating frequencies to 1 kHz, 600V collector-to-emitter voltages, and continuous collector current from 100 to 400 Amps. The devices can be directly mounted to heatsinks and offer low EMI to reduce snubbing requirements.

The devices being introduced include: VS-GP100TS60SFPbF with IC = 100A, VCE(on ) = 1.16V, Eoff = 15.3mJ, configured in a half-bridge in an INT-A-PACK, with Trench PT IGBTs and FRED Pt diode; VS-GP250SA60S with IC = 250A, VCE(on ) = 1.10V, Eoff = 11mJ, configured as a single switch in an SOT-227, with Trench PT IGBTs and no diode; VS-GP300TD60S with IC = 300A, VCE(on ) = 1.3V, Eoff = 33mJ, configured in a half-bridge in a DIAP low profile, with Trench PT IGBTs and HEXFRED diode; and the VS-GP400TD60S with IC = 400A, VCE(on ) = 1.3V, Eoff = 45mJ, configured in a half-bridge in a DIAP low profile, with Trench PT IGBTs and HEXFRED diode.

Samples and production quantities of the new IGBT power modules are available now, with lead times of eight to 10 weeks for larger orders. Pricing for U.S. delivery only starts at $9.10 for the VS-GP250SA60S, $34.50 for the VS-GP100TS60SFPbF, $68 for the VS-GP400TD60S, and $63.20 for the VS-GP300TD60S.