EEPower

Latest Semiconductors Articles

Categories

Integrated MOSFET Voltage Regulator for PoL Designs

Integrated MOSFET Voltage Regulator for PoL Designs

Third-Generation MOSFET Platform Expanded to 1200V

Third-Generation MOSFET Platform Expanded to 1200V

Wolfspeed expands its innovative C3M™ platform by introducing a 1200V, 75mΩ MOSFET in low-inductance discrete packaging


new products Feb 23, 2017 by Wolfspeed
Transphorm to Rev High-Voltage GaN at APEC

Transphorm to Rev High-Voltage GaN at APEC

1200V 75mOhm SiC FET in Low-Inductance Package

1200V 75mOhm SiC FET in Low-Inductance Package

The Creation and Potential Cell Structures of SiC Devices

The Creation and Potential Cell Structures of SiC Devices

> <p>This article highlights ROHM about the potential structures of SiC devices, focusing on different structures and showing that…


High Voltage IGBT Modules in the 3300 V Class

High Voltage IGBT Modules in the 3300 V Class

This article describes the basic points of the X-Series design including the improvements contributing to a safe operation of the device.


Pilot Production Coming for High-Performance PV Silicon

Pilot Production Coming for High-Performance PV Silicon


News Feb 20, 2017 by Jeff Shepard
Bulk AlN Platform for GaN High Voltage and Power

Bulk AlN Platform for GaN High Voltage and Power


News Feb 20, 2017 by Jeff Shepard
MOSFET Relays for 60V and 350V AC or DC Switching

MOSFET Relays for 60V and 350V AC or DC Switching

Integrated Half-Bridge GaN Power IC

Integrated Half-Bridge GaN Power IC

LV100 - a Dual Power Module for the Next Generation Railway Inverters

LV100 - a Dual Power Module for the Next Generation Railway Inverters

This article discusses the new standard dual-module package specially developed for High Voltage IGBTs HVIGBTs used in railway applications.


Modern Induction Cooking Demands Compact and Efficient Solutions

Modern Induction Cooking Demands Compact and Efficient Solutions

This article describes the challenges of inverter-based induction cooking and introduces a new technology that meets the technical and price…


Low-Leakage, Doping-Free 600V GaN HEMT Epiwafers

Low-Leakage, Doping-Free 600V GaN HEMT Epiwafers


News Feb 15, 2017 by Jeff Shepard
GaNonCMOS Project Aims for GaN Commercialization

GaNonCMOS Project Aims for GaN Commercialization


News Feb 14, 2017 by Jeff Shepard
Automotive Three-Phase Isolated MOSFET Driver IC

Automotive Three-Phase Isolated MOSFET Driver IC

Applying Silver Low-Temperature Sintering Technology

Applying Silver Low-Temperature Sintering Technology

This article discusses the application of technologies of low-temperature sintering of silicon wafers and molybdenum discs using the silver…


48W Aux. Power Supply Evaluation Board for SiC FETs

48W Aux. Power Supply Evaluation Board for SiC FETs

Unidirectional ESD Protection in a 01005 Flip Chip Package Introduced

Unidirectional ESD Protection in a 01005 Flip Chip Package Introduced

Littelfuse, Inc. introduces its new series of three unidirectional TVS diode arrays in space-saving 01005 flip-chip packages


new products Feb 13, 2017 by Littelfuse
IEDM 2016 Showcases the Latest Technology Developments in MicroNanoelectronics and Power Devices

IEDM 2016 Showcases the Latest Technology Developments in MicroNanoelectronics and Power Devices

The 62nd annual IEEE International Electron Devices Meeting, (IEDM) was held in San Francisco, California, USA December 3 - 7, 2016. For more than six


tech insights Feb 13, 2017 by Gary Dolny
GaN Transistor Gate Drive Optocouplers

GaN Transistor Gate Drive Optocouplers

This article features Broadcom's Gallium Nitride (GaN) Transistor Gate Drive Optocouplers and discusses its advantages, marketing, drive and…