This article discusses the new standard dual-module package specially developed for High Voltage IGBTs HVIGBTs used in railway applications.
This article discusses the new standard dual-module package specially developed for High Voltage IGBTs HVIGBTs used in railway applications.
This article describes the challenges of inverter-based induction cooking and introduces a new technology that meets the…
This article describes the challenges of inverter-based induction cooking and introduces a new technology that meets the technical and price…
This article discusses the application of technologies of low-temperature sintering of silicon wafers and molybdenum…
This article discusses the application of technologies of low-temperature sintering of silicon wafers and molybdenum discs using the silver…
Littelfuse, Inc. introduces its new series of three unidirectional TVS diode arrays in space-saving 01005 flip-chip packages
Littelfuse, Inc. introduces its new series of three unidirectional TVS diode arrays in space-saving 01005 flip-chip packages
The 62nd annual IEEE International Electron Devices Meeting, (IEDM) was held in San Francisco, California, USA December 3…
The 62nd annual IEEE International Electron Devices Meeting, (IEDM) was held in San Francisco, California, USA December 3 - 7, 2016. For more than six
This article features Broadcom's Gallium Nitride (GaN) Transistor Gate Drive Optocouplers and discusses its advantages,…
This article features Broadcom's Gallium Nitride (GaN) Transistor Gate Drive Optocouplers and discusses its advantages, marketing, drive and…
At SPS in Nuremberg ROHM Semiconductor presented its Arduino-based evaluation kit (EVK) to support the evaluation of its…
At SPS in Nuremberg ROHM Semiconductor presented its Arduino-based evaluation kit (EVK) to support the evaluation of its motor driver devices as…
This article demonstrate the next step in device evolution can be achieved by combining the ET-IGBT MOS cell and the BIGT…
This article demonstrate the next step in device evolution can be achieved by combining the ET-IGBT MOS cell and the BIGT integration structure.
This article shows a modular power stage from Converter Technology that can rapidly prove the design of a 14kW, 800V LLC topology
This article shows a modular power stage from Converter Technology that can rapidly prove the design of a 14kW, 800V LLC topology
This article highlights Infineon Technologies North America Power Module designs that illustrate the importance of a…
This article highlights Infineon Technologies North America Power Module designs that illustrate the importance of a holistic design approach.
This article discusses the 62nd annual IEEE International Electron Devices Meeting that was held in San Francisco,…
This article discusses the 62nd annual IEEE International Electron Devices Meeting that was held in San Francisco, California, USA.
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