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Evaluating the Effect of High Switching Frequency on the Performance of an Active Front End Converter

Evaluating the Effect of High Switching Frequency on the Performance of an Active Front End Converter

This article features the benefits of operating at high frequencies and the impact of dead-time and inductance value on both operation and control…


10A 4000V Dual-Channel Isolated Gate-Driver

10A 4000V Dual-Channel Isolated Gate-Driver

IXYS Corporation announced a 10A/4000V, dual-channel, isolated gate-driver: IXIDM1401_1505_O


new products Apr 11, 2017 by IXYS
Highly Versatile DrMOS Power Module

Highly Versatile DrMOS Power Module

Alpha and Omega Semiconductor introduced AOZ5038QI, the highly versatile latest generation of power modules. The AOZ5038QI integrates a dual gate…


Reliable GaN Switches for Datacenter and Telecom Power

Reliable GaN Switches for Datacenter and Telecom Power

6-GHz GaN Power Amplifier Modules

6-GHz GaN Power Amplifier Modules

Third-Generation SiC MOSFET Platform expanded to 1200V

Third-Generation SiC MOSFET Platform expanded to 1200V

Wolfspeed expands its innovative C3M™ platform through the introduction of 1200V, 75mΩ MOSFET in low-inductance discrete packaging


new products Apr 07, 2017 by Wolfspeed
SiC at Japan’s Synchrotron Radiation Research Institute

SiC at Japan’s Synchrotron Radiation Research Institute


News Apr 06, 2017 by Jeff Shepard
Ballistic Missile System to get GaN Upgrade

Ballistic Missile System to get GaN Upgrade


News Apr 06, 2017 by Jeff Shepard
1200V Silicon-Carbide Schottky Rectifiers in DPAK-2L

1200V Silicon-Carbide Schottky Rectifiers in DPAK-2L

11mOhm, 30V FET Increases Power Density and Efficiency

11mOhm, 30V FET Increases Power Density and Efficiency

A Practical Study on Three-Level Hybrid SiC/Si Inverters

A Practical Study on Three-Level Hybrid SiC/Si Inverters

This article highlights Infineon Technologies Italia S.r.l - Austria AG demonstration of the use of SiC devices that allows high degree of freedom…


1200V SiC Dual Schottky Diodes in SOT-227

1200V SiC Dual Schottky Diodes in SOT-227

1200V SiC MOSFET Technology Platform to be Revealed

1200V SiC MOSFET Technology Platform to be Revealed

Extremely Efficient Energy Storage Based On Three-Level Silicon Carbide Power Module

Extremely Efficient Energy Storage Based On Three-Level Silicon Carbide Power Module

This article features the benefits of using SiC Power Modules in terms of energy conversion efficiency, cost-efficiency and environmental energy…


ADI Acquires Broadband GaAs and GaN Amplifier Tech

ADI Acquires Broadband GaAs and GaN Amplifier Tech


News Mar 29, 2017 by Jeff Shepard
Increasing Power Density and Improving Efficiency

Increasing Power Density and Improving Efficiency

This article features ROHM's new 1700V SiC MOSFETs for Switch-mode Power Supplies and its benefits in terms of power density and efficiency.


600V Intelligent IGBT Modules are UL-Recognized

600V Intelligent IGBT Modules are UL-Recognized

State of the SiC MOSFET: Device evolution, technology merit, and commercial prospects

State of the SiC MOSFET: Device evolution, technology merit, and commercial prospects

This article features Littelfuse Inc. SiC MOSFET device evolution, technology merit, and commercial success and substantial role for green energy…


650V GaN FETs are Automotive-Qualified

650V GaN FETs are Automotive-Qualified

Danfoss and GE Enter SiC Strategic Collaboration

Danfoss and GE Enter SiC Strategic Collaboration


News Mar 26, 2017 by Jeff Shepard