11mOhm, 30V FET Increases Power Density and Efficiency

Vishay Intertechnology, Inc. today introduced a new 30V n-channel TrenchFET® Gen IV power MOSFET that delivers increased power density and efficiency for mobile devices, consumer electronics, and power supplies. Offered in the ultra compact PowerPAK® SC-70 package, the Vishay Siliconix SiA468DJ claims the industry's lowest on-resistance and highest continuous drain current for 30V devices in 2mm by 2mm plastic packages.

60% smaller than devices in the PowerPAK 1212, the MOSFET released today is one of the most compact 30V solutions available for dc-dc conversion and load switching for battery management in devices such as notebook computers, tablets, VR headsets, and dc-dc bricks; H-bridges in wireless chargers; and motor drive control for drones.

To reduce conduction loss and increase efficiency in these applications, the SiA468DJ features extremely low on-resistance of 8.4mΩ at 10V and 11.4mΩ at 4.5V. These values represent a 51% improvement over previous-generation solutions and a 6% improvement over the closest competing device. In addition, the MOSFET's low gate charge times on-resistance figure of merit (FOM) is optimized for a diverse range of power conversion topologies.

The SiA468DJ's 37.8A continuous drain current is 68% higher than previous-generation devices and 50% higher than the closest competing solution. This high current rating offers an ample safety margin for applications that encounter high transient current. The MOSFET is 100% RG-tested, RoHS-compliant, and halogen-free.

Samples and production quantities of the SiA468DJ are available now, with lead times of 13 weeks for large orders.