1200V SiC MOSFET Technology Platform to be Revealed

April 03, 2017 by Power Pulse1595211359

At the PCIM (Power Conversion and Intelligent Motion) Europe 2017 Conference in Nuremberg, Germany from May 16 through 18, 2017, Littelfuse will present the first commercially available silicon carbide devices developed through their partnership with Monolith Semiconductor; the new GEN2 Series of 1200 silicon carbide (SiC) Schottky Diodes. Visitors to the Littelfuse PCIM Europe 2017 booth (Hall 7, Booth 335) will also get a first look at the partnership's next technology platform for the power semiconductor market, a line of 1200V SiC MOSFETs.

Monolith will also participate in two poster presentations and an industry forum at PCIM Europe 2017: “System Level Comparison of SiC IGBTs and SiC MOSFETs,” Poster Dialogue Session PP017, May 16, 3:30-5:30 pm, Foyer Ground Floor Entrance NCC Mitte. “Characterization and Optimization of SiC Freewheeling Diode for Switching Losses Minimization Over Wide Temperature Range,” Poster Dialogue Session PP019, May 16, 3:30-5:30 pm, Foyer Ground Floor Entrance NCC Mitte. “SiC MOSFETs – How Can We Match the Success of SiC Diodes?” Industry Forum, May 18, Hall 6, Booth 6143.

In 2015, Littelfuse, Inc. and Monolith formed a strategic partnership to develop power semiconductors for industrial and automotive markets. Earlier this month, Littelfuse made an incremental $15 million investment in Monolith. As a result of this additional investment, Littelfuse now has a majority ownership position in Monolith and will begin including Monolith in its operating financial results.

Joint demonstrations by Littelfuse and Monolith at both APEC and PCIM demonstrate the level of resources both partners are willing to commit to develop applications and support customers in the use of the designs.