EEPower

Latest Semiconductors Articles

Categories

Transphorm Strengthens 900 V GaN Portfolio with Second FET

Transphorm Strengthens 900 V GaN Portfolio with Second FET

This article highlights Transphorm Inc. introduction of its second 900 V FET, the Gen III TP90H050WS, enhancing the industry’s only 900 V GaN…

new products Jun 25, 2019 by Transphorm
Sanan IC Expands Portfolio with 650V 150mm GaN-on-Silicon Process

Sanan IC Expands Portfolio with 650V 150mm GaN-on-Silicon Process

News Jun 24, 2019 by Paul Shepard
SiC Module enables >98% Efficient 300kW Three-Phase Inverter Reference Design

SiC Module enables >98% Efficient 300kW Three-Phase Inverter Reference Design

new products Jun 24, 2019 by Paul Shepard
Fuji Electric Launches 7400WXT3U a High-Capacity Uninterruptible Power Supply System for Overseas Markets

Fuji Electric Launches 7400WXT3U a High-Capacity Uninterruptible Power Supply System for Overseas Markets

Fuji Electric Co., Ltd. is pleased to announce the launch of the 7400WX-T3U, a high-capacity uninterruptible power supply system (UPS), to…

new products Jun 24, 2019 by Fuji Electric
Compound Semiconductor Centre Participates in UK SiC Supply Chain Project

Compound Semiconductor Centre Participates in UK SiC Supply Chain Project

News Jun 22, 2019 by Scott McMahan
10kW/10kVA Three-Level, Three-Phase SiC AC-DC Reference Design

10kW/10kVA Three-Level, Three-Phase SiC AC-DC Reference Design

News Jun 21, 2019 by Paul Shepard
UnitedSiC adds 4-lead Kelvin 1200V/150mΩ SiC FET

UnitedSiC adds 4-lead Kelvin 1200V/150mΩ SiC FET

new products Jun 20, 2019 by Paul Shepard
UnitedSiC adds new 4-lead Kelvin device to UF3C FAST FET series

UnitedSiC adds new 4-lead Kelvin device to UF3C FAST FET series

This article highlights UnitedSiC UF3C120150K4S 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin Sense discrete package option.

new products Jun 20, 2019 by United Silicon Carbide
GaN Makes a Frontal Attack on Silicon Power MOSFETs

GaN Makes a Frontal Attack on Silicon Power MOSFETs

This article highlights Efficient Power Conversion eGaN FETs improvements in size and performance compared with equivalently Silicon power MOSFETs.

Technical Articles Jun 20, 2019 by Alex Lidow
Accelerate Time-to-Market for SiC- and GaN-Based High-Power Designs

Accelerate Time-to-Market for SiC- and GaN-Based High-Power Designs

News Jun 19, 2019 by Paul Shepard
Metal Composite Power Inductors for HV Applications including GaN-Based Converters

Metal Composite Power Inductors for HV Applications including GaN-Based Converters

new products Jun 19, 2019 by Scott McMahan
61W GaN-based USB-C Wall Charger is 50% Smaller than Standard Chargers

61W GaN-based USB-C Wall Charger is 50% Smaller than Standard Chargers

News Jun 19, 2019 by Scott McMahan
600-V 150mΩ 6-A Single-Channel GaN Power Stage

600-V 150mΩ 6-A Single-Channel GaN Power Stage

new products Jun 17, 2019 by Paul Shepard
Cissoid and IEE/CAS Partner on SiC Power Module Development for EVs

Cissoid and IEE/CAS Partner on SiC Power Module Development for EVs

News Jun 14, 2019 by Scott McMahan
1200V / 150A SiC-MOSFET Module Features High Reliability and Low Losses

1200V / 150A SiC-MOSFET Module Features High Reliability and Low Losses

new products Jun 14, 2019 by Paul Shepard
Accelerated Development Kits Unlock the Full Potential of SiC MOSFET Modules

Accelerated Development Kits Unlock the Full Potential of SiC MOSFET Modules

News Jun 13, 2019 by Paul Shepard
AMR-Based Current Sensors Suited for SiC- and GaN-based Applications

AMR-Based Current Sensors Suited for SiC- and GaN-based Applications

new products Jun 13, 2019 by Paul Shepard
GaN Systems Shows How GaN is Revolutionizing Wireless Charging

GaN Systems Shows How GaN is Revolutionizing Wireless Charging

News Jun 12, 2019 by Paul Shepard
Unlock the Full Potential of SiC MOSFET Modules

Unlock the Full Potential of SiC MOSFET Modules

This article highlights AgileSwitch Augmented Switching Accelerated Development Kit or ASDAK for power electronics engineers working with SiC…

new products Jun 12, 2019 by Agile Switch
New 2D Semiconductor Found to Have 1.7 Electron Volt Bandgap

New 2D Semiconductor Found to Have 1.7 Electron Volt Bandgap

News Jun 07, 2019 by Scott McMahan