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MagnaChip Targets Fast-Growing e-Bike Market with High-Performance MOSFET

MagnaChip Targets Fast-Growing e-Bike Market with High-Performance MOSFET

MagnaChip Targets Fast-Growing e-Bike Market with High-Performance MOSFET.


CCM/DCM Flyback Ideal Diode with Integrated 100V/10mΩ FET and No Need for Auxiliary Winding

CCM/DCM Flyback Ideal Diode with Integrated 100V/10mΩ FET and No Need for Auxiliary Winding

WIN Semiconductors Offers Sample Kits for its GaN on SiC 0.15μm-gate Technology

WIN Semiconductors Offers Sample Kits for its GaN on SiC 0.15μm-gate Technology


News Oct 02, 2019 by Paul Shepard
X-FAB Strengthens Foundry Service Cooperation with EUROPRACTICE

X-FAB Strengthens Foundry Service Cooperation with EUROPRACTICE

X-FAB Silicon Foundries SE announced that it is broadening the scope of its cooperation with the EUROPRACTICE Consortium which counts high-profile…


new products Oct 02, 2019 by X-Fab
Dutch Solar Car Team Chooses UnitedSiC Silicon Carbide FET Devices for Global Racing Challenge

Dutch Solar Car Team Chooses UnitedSiC Silicon Carbide FET Devices for Global Racing Challenge

Dutch Solar Car Team Chooses UnitedSiC Silicon Carbide FET Devices for Global Racing Challenge.


Dual Port SiC-Based Fast Charger for Airport Ground Support Operations

Dual Port SiC-Based Fast Charger for Airport Ground Support Operations

EPC Launches 3rd Edition of Gallium Nitride GaN Textbook with Power Conversion Applications Focus

EPC Launches 3rd Edition of Gallium Nitride GaN Textbook with Power Conversion Applications Focus

This features Efficient Power Conversion Corporation (EPC) publication of the third edition of “GaN Transistors for Efficient Power…


new products Oct 01, 2019 by EPC
High Performance GaAs semiconductors from 35PE excel at rapid charging for evehicles

High Performance GaAs semiconductors from 35PE excel at rapid charging for evehicles

This article highlights 35PE High-performance gallium arsenide (GaAs)-based electronics have the potential to help new technologies achieve…


new products Oct 01, 2019 by 35PE
Transphorms 150 m and 240 m 650 V GaN FETs

Transphorms 150 m and 240 m 650 V GaN FETs

This artilcle highlights Transphorm 150 mΩ TP65H150LSG FET and 240 mΩ TP65H300G4LSG FET that are high-voltage and high current density GaN devices.


new products Oct 01, 2019 by Transphorm
SMP Has Developed quotAll Modequot EMC Filters with HighFrequency Stability

SMP Has Developed quotAll Modequot EMC Filters with HighFrequency Stability

This article highlights the SMP development of "All Mode EMC" filters with high-frequency stability using composite materials.


new products Oct 01, 2019 by SMP
WIN Semiconductors’ Integrated GaAs Technology Optimized for 5G Front-ends

WIN Semiconductors’ Integrated GaAs Technology Optimized for 5G Front-ends

Integrated Silicon III-V Chips to be Commercially Available in 2020

Integrated Silicon III-V Chips to be Commercially Available in 2020


News Sep 30, 2019 by Paul Shepard
Capacitors Optimized for Fast Switching Wide Bandgap Semiconductor Designs

Capacitors Optimized for Fast Switching Wide Bandgap Semiconductor Designs

Power Integrations Delivers One-Millionth GaN-Based InnoSwitch3 IC

Power Integrations Delivers One-Millionth GaN-Based InnoSwitch3 IC


News Sep 30, 2019 by Paul Shepard
Protect 10GbE HighSpeed Differential Data Lines with Littelfuse Low Capacitance TVS Diode Arrays

Protect 10GbE HighSpeed Differential Data Lines with Littelfuse Low Capacitance TVS Diode Arrays

Littelfuse, Inc., the global leader in circuit protection, introduced a series of low capacitance TVS Diode Arrays (SPA® Diodes) optimized to…


new products Sep 30, 2019 by Littelfuse
EconoDUAL 3 has Highest Power Density and Performance Using New IGBT7

EconoDUAL 3 has Highest Power Density and Performance Using New IGBT7

This article highlights Infineon chipset of IGBT7 and emitter-controlled 7 diode that is user-friendly and optimized to fulfill the GPD requirements.


Mitsubishi Develops Trench-Type SiC-MOSFET with Unique Electric-Field-Limiting Structure

Mitsubishi Develops Trench-Type SiC-MOSFET with Unique Electric-Field-Limiting Structure


News Sep 29, 2019 by Paul Shepard
SiC to Enable 1MW Inverter in the Size of a Compact Suitcase

SiC to Enable 1MW Inverter in the Size of a Compact Suitcase


News Sep 27, 2019 by Paul Shepard
Gallium Nitride Discovery Aims for Efficient P-Type GaN Transistors

Gallium Nitride Discovery Aims for Efficient P-Type GaN Transistors


News Sep 26, 2019 by Paul Shepard
10kW Bi-Directional, Dual Active Bridge Reference Design with SiC MOSFETs

10kW Bi-Directional, Dual Active Bridge Reference Design with SiC MOSFETs


News Sep 25, 2019 by Paul Shepard