Dutch Solar Car Team Chooses UnitedSiC Silicon Carbide FET Devices for Global Racing Challenge.
Dutch Solar Car Team Chooses UnitedSiC Silicon Carbide FET Devices for Global Racing Challenge.
This artilcle highlights Transphorm 150 mΩ TP65H150LSG FET and 240 mΩ TP65H300G4LSG FET that are high-voltage and high…
This artilcle highlights Transphorm 150 mΩ TP65H150LSG FET and 240 mΩ TP65H300G4LSG FET that are high-voltage and high current density GaN devices.
This article highlights Toshiba Electronics Europe GmbH dual-channel solenoid driver IC that provides a high-voltage…
This article highlights Toshiba Electronics Europe GmbH dual-channel solenoid driver IC that provides a high-voltage drive with low ON resistance.
This article features JSC Proton-Electrotex research and development to find structural and technological solutions…
This article features JSC Proton-Electrotex research and development to find structural and technological solutions providing increased insulation…
This article features UnitedSiC additional two new TO220-3L package options to its growing range of hard-switching UF3C…
This article features UnitedSiC additional two new TO220-3L package options to its growing range of hard-switching UF3C FAST series of 650V SiC FETs.
This article highlights Transphorm Inc. introduction of its second 900 V FET, the Gen III TP90H050WS, enhancing the…
This article highlights Transphorm Inc. introduction of its second 900 V FET, the Gen III TP90H050WS, enhancing the industry’s only 900 V GaN…
This article highlights UnitedSiC UF3C120150K4S 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin…
This article highlights UnitedSiC UF3C120150K4S 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin Sense discrete package option.
This article highlights Microchip’s 700V SiC MOSFETs, and 700V and 1200V SiC Schottky Barrier Diodes (SBDs) join its…
This article highlights Microchip’s 700V SiC MOSFETs, and 700V and 1200V SiC Schottky Barrier Diodes (SBDs) join its existing portfolio of SiC…