EEPower

Latest Power FETs Articles

Categories

CCM/DCM Flyback Ideal Diode with Integrated 100V/10mΩ FET and No Need for Auxiliary Winding

CCM/DCM Flyback Ideal Diode with Integrated 100V/10mΩ FET and No Need for Auxiliary Winding

Dutch Solar Car Team Chooses UnitedSiC Silicon Carbide FET Devices for Global Racing Challenge

Dutch Solar Car Team Chooses UnitedSiC Silicon Carbide FET Devices for Global Racing Challenge

Dutch Solar Car Team Chooses UnitedSiC Silicon Carbide FET Devices for Global Racing Challenge.


Transphorms 150 m and 240 m 650 V GaN FETs

Transphorms 150 m and 240 m 650 V GaN FETs

This artilcle highlights Transphorm 150 mΩ TP65H150LSG FET and 240 mΩ TP65H300G4LSG FET that are high-voltage and high current density GaN devices.


new products Oct 01, 2019 by Transphorm
Toshiba Launches High-Voltage Dual-Channel Solenoid Driver IC

Toshiba Launches High-Voltage Dual-Channel Solenoid Driver IC

Toshiba Launches High Voltage Dual Channel Solenoid Driver IC

Toshiba Launches High Voltage Dual Channel Solenoid Driver IC

This article highlights Toshiba Electronics Europe GmbH dual-channel solenoid driver IC that provides a high-voltage drive with low ON resistance.


1.2kW GaN FET Half-Bridge Synchronous Buck or Boost Evaluation Board

1.2kW GaN FET Half-Bridge Synchronous Buck or Boost Evaluation Board


News Sep 12, 2019 by Paul Shepard
180nm BCD-on-SOI Platform with High-Voltage Devices Targets Automotive Systems

180nm BCD-on-SOI Platform with High-Voltage Devices Targets Automotive Systems


News Aug 27, 2019 by Paul Shepard
Inductors Meet Complex Requirements of GaN-Based High Power Density Designs

Inductors Meet Complex Requirements of GaN-Based High Power Density Designs

3A Integrated FET Synchronous Buck DC-DC Converter

3A Integrated FET Synchronous Buck DC-DC Converter

High Voltage Power Semiconductor Modules with Enhanced Insulation Properties

High Voltage Power Semiconductor Modules with Enhanced Insulation Properties

This article features JSC Proton-Electrotex research and development to find structural and technological solutions providing increased insulation…


1.7kV SiC JFET Eases High Voltage Utility Power Supply Design – App Note

1.7kV SiC JFET Eases High Voltage Utility Power Supply Design – App Note


News Aug 07, 2019 by Paul Shepard
600V E-Mode GaN Power Transistor offers Fast Turn On/Off with Minimum Loses

600V E-Mode GaN Power Transistor offers Fast Turn On/Off with Minimum Loses

UnitedSiC Adds Two New 650V FET Packages to UF3C FAST Series

UnitedSiC Adds Two New 650V FET Packages to UF3C FAST Series

This article features UnitedSiC additional two new TO220-3L package options to its growing range of hard-switching UF3C FAST series of 650V SiC FETs.


Transphorm Strengthens 900 V GaN Portfolio with Second FET

Transphorm Strengthens 900 V GaN Portfolio with Second FET

This article highlights Transphorm Inc. introduction of its second 900 V FET, the Gen III TP90H050WS, enhancing the industry’s only 900 V GaN…


new products Jun 25, 2019 by Transphorm
UnitedSiC adds 4-lead Kelvin 1200V/150mΩ SiC FET

UnitedSiC adds 4-lead Kelvin 1200V/150mΩ SiC FET

UnitedSiC adds new 4-lead Kelvin device to UF3C FAST FET series

UnitedSiC adds new 4-lead Kelvin device to UF3C FAST FET series

This article highlights UnitedSiC UF3C120150K4S 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin Sense discrete package option.


Accelerate Time-to-Market for SiC- and GaN-Based High-Power Designs

Accelerate Time-to-Market for SiC- and GaN-Based High-Power Designs


News Jun 19, 2019 by Paul Shepard
High-Voltage 3-Phase Integrated BLDC Motor Drive ICs for Consumer Devices

High-Voltage 3-Phase Integrated BLDC Motor Drive ICs for Consumer Devices

GaN-on-SiC Transistor for 2.45GHz RF Surpasses Efficiency of Most Magnetrons

GaN-on-SiC Transistor for 2.45GHz RF Surpasses Efficiency of Most Magnetrons


News Jun 05, 2019 by Scott McMahan
Silicon Carbide SiC Products for High-Voltage Reliable Power Electronics

Silicon Carbide SiC Products for High-Voltage Reliable Power Electronics

This article highlights Microchip’s 700V SiC MOSFETs, and 700V and 1200V SiC Schottky Barrier Diodes (SBDs) join its existing portfolio of SiC…