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SiC MOSFETs in Optimized Packaging Deliver a 3× Reduction in Switching Losses, Enabling Affordable High-Efficiency EV Battery Chargers

SiC MOSFETs in Optimized Packaging Deliver a 3× Reduction in Switching Losses, Enabling Affordable High-Efficiency EV Battery Chargers

This article highlights Wolfspeed C3M™ SiC MOSFETs that considers package inductance and printed circuit board layout as factors for best system…


Novel Technique to Reduce Substrate Tilt amp Improve Bondline Control between AlN Substrate and AlSiC Baseplate in IGBT Modules

Novel Technique to Reduce Substrate Tilt amp Improve Bondline Control between AlN Substrate and AlSiC Baseplate in IGBT Modules

This article features a novel technique to redue substrate tilt and improve bondline control between AIN substrate and AlSiC Baseplate in IGBT…


48V-to-1V Conversion - the Rebirth of Direct-to-Chip Power

48V-to-1V Conversion - the Rebirth of Direct-to-Chip Power

High-Speed Fuses for Semiconductor Device Protection

High-Speed Fuses for Semiconductor Device Protection

MOSFET-based Modules for Motor Drives up to 100W

MOSFET-based Modules for Motor Drives up to 100W

Standalone Battery Monitoring IC for Light Electric Vehicles

Standalone Battery Monitoring IC for Light Electric Vehicles

200V GaN Power Transistor is 12x Smaller Than MOSFETs

200V GaN Power Transistor is 12x Smaller Than MOSFETs

1200V Reverse Conducting IGBT Optimized for Hard Switching

1200V Reverse Conducting IGBT Optimized for Hard Switching

High Humidity Robustness of ABB’s IGBTs and Diodes

High Humidity Robustness of ABB’s IGBTs and Diodes

This article provides insight into the latest generation of 6.5kV HiPak modules with reliable performance demonstrated in the new THB-HVDC test.


GaN + Digital Power in Next-gen Envelope-Tracking LTE PA

GaN + Digital Power in Next-gen Envelope-Tracking LTE PA


News May 24, 2017 by Jeff Shepard
Configurable Gate Drives for nHPD2

Configurable Gate Drives for nHPD2

This article discusses a flexible approach to gate drive designs using nHPD2 package from Hitachi targeted at traction applications.


New Contender for the Power Transistor Throne

New Contender for the Power Transistor Throne

This article highlights Panasonic Hybrid Drain Gate Injection Transistor (HD-GiT) with overview of advantages that aimed aimed at power converters.


ON Semi Qualifies SST Smartbit OTP NVM Tech

ON Semi Qualifies SST Smartbit OTP NVM Tech


News May 23, 2017 by Jeff Shepard
Double Power Density with New Motor Control Devices

Double Power Density with New Motor Control Devices

Texas Instruments today introduced two new device families that help reduce size and weight in motor drive applications


New Horizons in Thermal Cycling Capability Realized with the 7th gen. IGBT Module Based on SLC-Technology

New Horizons in Thermal Cycling Capability Realized with the 7th gen. IGBT Module Based on SLC-Technology

This article features the 7th generation IGBT Module based on SLC (SoLid Cover)-Technology with high reliability and high thermal conductivity.


Partners Invest $100 Million to Expand FD-SOI Ecosystem in China

Partners Invest $100 Million to Expand FD-SOI Ecosystem in China


News May 22, 2017 by Jeff Shepard
Gate Driver and Power MOSFET Solutions for BLDC Control

Gate Driver and Power MOSFET Solutions for BLDC Control

Isolated Gate Drivers Deliver Solutions for GaN and SiC

Isolated Gate Drivers Deliver Solutions for GaN and SiC

PCIM Europe – More International and More GaN

PCIM Europe – More International and More GaN

Thick-Film Chip Resistors Handle 0.33W in 0805 Size

Thick-Film Chip Resistors Handle 0.33W in 0805 Size