This article introduces STMicroelectronics' full range of 2A-40A 1200V silicon-carbide (SiC) JBS (Junction Barrier Schottky) diodes
This article introduces STMicroelectronics' full range of 2A-40A 1200V silicon-carbide (SiC) JBS (Junction Barrier Schottky) diodes
This article focuses on automotive-grade SiC power devices, including some of their common applications and reliability data.
This article focuses on automotive-grade SiC power devices, including some of their common applications and reliability data.
Infineon Technologies AG introduces the fifth generation of the stand-alone quasi-resonant flyback controller and…
Infineon Technologies AG introduces the fifth generation of the stand-alone quasi-resonant flyback controller and integrated power IC CoolSET™…
Transphorm Inc. announced that its second generation, JEDEC-qualified high voltage gallium nitride (GaN) technology is…
Transphorm Inc. announced that its second generation, JEDEC-qualified high voltage gallium nitride (GaN) technology is now the industry’s first…
Alpha and Omega Semiconductor Limited introduced the AOZ1375, AOS’s first Type-C Power Delivery full-compliant power…
Alpha and Omega Semiconductor Limited introduced the AOZ1375, AOS’s first Type-C Power Delivery full-compliant power protection switch.
This article discusses the Silicon Carbide Technology with Chris Dries from USCi.
This article discusses the Silicon Carbide Technology with Chris Dries from USCi.
A Digitally Enhanced Power Analog product for DC-DC power conversion is now available from Microchip Technology Inc.
A Digitally Enhanced Power Analog product for DC-DC power conversion is now available from Microchip Technology Inc.
Alpha and Omega Semiconductor Limited announced the release of AOC3860, a common-drain 12V dual n-channel MOSFET with the…
Alpha and Omega Semiconductor Limited announced the release of AOC3860, a common-drain 12V dual n-channel MOSFET with the lowest on-resistance in…
This article highlights GaN Systems Inc. comparison of GaN E-HEMTs and SiC MOSFET performance and characteristics in…
This article highlights GaN Systems Inc. comparison of GaN E-HEMTs and SiC MOSFET performance and characteristics in power switching applications.