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4-channel H-bridge 40V / 3.5A Motor Driver IC

4-channel H-bridge 40V / 3.5A Motor Driver IC

High Power Density Discrete 1200V IGBT in TO-247PLUS

High Power Density Discrete 1200V IGBT in TO-247PLUS

RFMicrowave Solutions Showcasing at IMS 2017

RFMicrowave Solutions Showcasing at IMS 2017

AVX Corporation, a leading manufacturer and supplier of passive components and interconnect solutions, is showcasing its vast portfolio of…


new products Jun 05, 2017 by AVX
5nm Nanosheet IC Technology Yields 75% Power Savings

5nm Nanosheet IC Technology Yields 75% Power Savings


News Jun 04, 2017 by Jeff Shepard
Monolithic GaN Half Bridge Enables 85% Efficient 12V-to-1.8V PoLs

Monolithic GaN Half Bridge Enables 85% Efficient 12V-to-1.8V PoLs

1200V CoolSiC™ MOSFET: High Performance Complemented by High Reliability

1200V CoolSiC™ MOSFET: High Performance Complemented by High Reliability

This article discusses the advantages and benefits of applying Infineon's SiC MOSFETs with blocking voltages of 1200V in various application…


150W GaN-Based AC-DC Reference Design Over 95% Efficient

150W GaN-Based AC-DC Reference Design Over 95% Efficient


News Jun 01, 2017 by Jeff Shepard
Joining Forces in Strategic SiC Collaboration

Joining Forces in Strategic SiC Collaboration

Danfoss Silicon Power is establishing production in the US and entering into a collaboration with industrial giant General Electric (GE)


Automotive ASIC Qualified for AEC-Q100 and AEC-Q006

Automotive ASIC Qualified for AEC-Q100 and AEC-Q006


News May 31, 2017 by Jeff Shepard
USB-C Single-Chip Port Controllers with PD V3.0

USB-C Single-Chip Port Controllers with PD V3.0

SiC MOSFETs in Optimized Packaging Deliver a 3× Reduction in Switching Losses, Enabling Affordable High-Efficiency EV Battery Chargers

SiC MOSFETs in Optimized Packaging Deliver a 3× Reduction in Switching Losses, Enabling Affordable High-Efficiency EV Battery Chargers

This article highlights Wolfspeed C3M™ SiC MOSFETs that considers package inductance and printed circuit board layout as factors for best system…


Novel Technique to Reduce Substrate Tilt amp Improve Bondline Control between AlN Substrate and AlSiC Baseplate in IGBT Modules

Novel Technique to Reduce Substrate Tilt amp Improve Bondline Control between AlN Substrate and AlSiC Baseplate in IGBT Modules

This article features a novel technique to redue substrate tilt and improve bondline control between AIN substrate and AlSiC Baseplate in IGBT…


48V-to-1V Conversion - the Rebirth of Direct-to-Chip Power

48V-to-1V Conversion - the Rebirth of Direct-to-Chip Power

High-Speed Fuses for Semiconductor Device Protection

High-Speed Fuses for Semiconductor Device Protection

MOSFET-based Modules for Motor Drives up to 100W

MOSFET-based Modules for Motor Drives up to 100W

Standalone Battery Monitoring IC for Light Electric Vehicles

Standalone Battery Monitoring IC for Light Electric Vehicles

200V GaN Power Transistor is 12x Smaller Than MOSFETs

200V GaN Power Transistor is 12x Smaller Than MOSFETs

1200V Reverse Conducting IGBT Optimized for Hard Switching

1200V Reverse Conducting IGBT Optimized for Hard Switching

High Humidity Robustness of ABB’s IGBTs and Diodes

High Humidity Robustness of ABB’s IGBTs and Diodes

This article provides insight into the latest generation of 6.5kV HiPak modules with reliable performance demonstrated in the new THB-HVDC test.


GaN + Digital Power in Next-gen Envelope-Tracking LTE PA

GaN + Digital Power in Next-gen Envelope-Tracking LTE PA


News May 24, 2017 by Jeff Shepard