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Low-Profile 8A/650V SiC Schottkys for Extremely Compact and Efficient Power Supplies

Low-Profile 8A/650V SiC Schottkys for Extremely Compact and Efficient Power Supplies

EPC to Present GaN Vision at APEC 2019

EPC to Present GaN Vision at APEC 2019

Molded Core Power Inductors or Bus Bars for Automotive and Industrial Applications

Molded Core Power Inductors or Bus Bars for Automotive and Industrial Applications

Molded Core Power Inductors or Bus Bars for Automotive and Industrial ApplicationsChokes and Bus Bar Solutions by Chang Sung Corporation (CSC) are…


PCIM Europe 2019 Spotlight on Major Development Trends in Power Electronics

PCIM Europe 2019 Spotlight on Major Development Trends in Power Electronics

Premiering at the PCIM Europe Conference, research results and developments along the entire value chain of power electronics will be presented to the


new products Mar 07, 2019 by PCIM Europe
Transphorms Gen III GaN Platform Earns Automotive Qualification

Transphorms Gen III GaN Platform Earns Automotive Qualification

Transphorm Inc.—the leader in the design and manufacturing of the highest reliability and first JEDEC- and AEC-Q101 qualified 650 V gallium…


new products Mar 07, 2019 by Transphorm
3.5A to 11A, 650V GaN Transistors Target Consumer Applications

3.5A to 11A, 650V GaN Transistors Target Consumer Applications

Power Modules for UPS and Energy Storage Applications

Power Modules for UPS and Energy Storage Applications

Addressing the fast-growing demand for silicon carbide (SiC) solutions, Infineon Technologies launches devices in the 1200V CoolSiC™ MOSFET…


Nexperia Achieves 35 Revenue Growth in First Two Years as a Standalone Company

Nexperia Achieves 35 Revenue Growth in First Two Years as a Standalone Company

 Nexperia, the global leader in discretes, logic, and MOSFET devices, today announced that in just two years as a standalone company, it is…


new products Mar 06, 2019 by Nexperia
Innovative “Isolated Wire-in-Wire” Transformers for use with Gate Drivers from Power Integrations

Innovative “Isolated Wire-in-Wire” Transformers for use with Gate Drivers from Power Integrations


News Mar 05, 2019 by Paul Shepard
GaN Systems Debuts Suite of Low Cost High Performance GaN Power Transistors

GaN Systems Debuts Suite of Low Cost High Performance GaN Power Transistors

GaN Systems announced the availability of the GS-065 low current transistor line.


new products Mar 05, 2019 by GaN Systems
New Power-Supply Transformers Complement Power Integrations SCALEiDriver GateDriver IC Family

New Power-Supply Transformers Complement Power Integrations SCALEiDriver GateDriver IC Family

Power Integrations, the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced a range of…


GaN Power ICs Handle 27W to 3.2kW for Next-Gen Power Converters

GaN Power ICs Handle 27W to 3.2kW for Next-Gen Power Converters


News Mar 04, 2019 by Scott McMahan
KEMET’s Engineering Center Bringing Interactive Competition to APEC 2019

KEMET’s Engineering Center Bringing Interactive Competition to APEC 2019


News Mar 04, 2019 by Scott McMahan
Automotive SiC MOSFETs in LowInductive SMD Package with Kelvin Source

Automotive SiC MOSFETs in LowInductive SMD Package with Kelvin Source

This article discusses the performance benefits arising from the use of a low-inductive SMD package with a Kelvin-Source pin for fast SiC MOSFETs.


ON Semiconductor Opens Bangalore Facility to Integrate Operations in India

ON Semiconductor Opens Bangalore Facility to Integrate Operations in India


News Mar 03, 2019 by Scott McMahan
40V Three-Phase Sensorless Sinusoidal Fan Driver IC Minimizes Vibration & Noise

40V Three-Phase Sensorless Sinusoidal Fan Driver IC Minimizes Vibration & Noise

Hans Keller joins Höganäs as new President for Product Area Surface and Joining Technologies

Hans Keller joins Höganäs as new President for Product Area Surface and Joining Technologies

Hans Keller joins Höganäs as President Product Area Surface & Joining Technologies on 1 March 2019.


new products Mar 01, 2019 by Hoganas
New SCALE-iDriver SiC-MOSFET Gate Driver from Power Integrations Maximizes Efficiency Improves Safety

New SCALE-iDriver SiC-MOSFET Gate Driver from Power Integrations Maximizes Efficiency Improves Safety

Power Integrations, the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced the SIC1182K…


JEDEC Wide Bandgap Power Semiconductor Committee Publishes First Document Test Method for Dynamic Resistance of GaN HEMT

JEDEC Wide Bandgap Power Semiconductor Committee Publishes First Document Test Method for Dynamic Resistance of GaN HEMT

 JEDEC announces the publication of JEP173: Dynamic On-Resistance Test Method Guidelines for GaN HEMT Based Power Conversion Devices


new products Mar 01, 2019 by JEDEC
Power Module Substrate Options Available to Lower Semiconductor Junction Temperatures for Increased Reliability

Power Module Substrate Options Available to Lower Semiconductor Junction Temperatures for Increased Reliability

This article examines changing a power module's substrate as a possible option for lowering its semiconductors junction temperatures without…