RF Micro Devices Debuts RF3800 Series Driver PAs

RF Micro Devices Inc. (RFMD, Greensboro, NC), a provider of proprietary radio frequency integrated circuits for wireless communications applications, announced the availability of its RF3800 Series of gallium-arsenide, hetero-junction, bipolar transistor (GaAs HBT), driver power amplifiers (PAs) for cellular base station, infrastructure applications. Comprised of the RF3800, RF3802 and RF3805, the series of multi-band platform devices features higher breakdown voltage for output power, efficiency and linearity.

The RF3800 Series provides up to +37 dBm of output power, high-power efficiency greater than 35% at P1dB, high linearity of +50 dBm, and higher gain of 14 dB to 20 dB under linear class AB operation. By utilizing RFMD's high-yielding GaAs HBT process technology, the RF3800 Series delivers a lower-cost, multi-band platform for infrastructure applications, ranging from 450 MHz to 2,200 MHz.