Diodes Inc. Introduces Dual Device MOSFETs In Small Packages

Diodes Inc. announced the release of dual device MOSFET combinations in thermally efficient small DFN packages for charging and switching applications in portable devices.

The DMS2220LFDB and DMS2120LFW co-package a 20V P-channel enhancement mode MOSFET with a companion diode in either a 2 x 2mm DFN2020 or 3 x 2mm DFN3020 package. The DMP2160UFDB co-packages two of the same MOSFETs in the DFN2020 format.

According to the company, compared to larger 3 x 3mm footprint packages traditionally used in portable application designs, the DFN2020 utilizes 55% less PCB space. Additionally, with an off-board height of only 0.5mm, the package is also 50% thinner, suiting next-generation product design.

The MOSFETs used in these packages feature low gate charge (Qg) and a typical R_DS(ON), of 86m at V_GS of 1.8V, ensuring that both switching and on state losses are minimized.

To further improve efficiency, the diode employed in these packages is the company’s own high performance SBR® rectifier. With a typical low forward voltage of only 0.42V, the SBR® offers a significant reduction in power dissipation compared to conventional Schottky diodes.