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Inevitability of Near Chip-Scale SMD Packaging for Power GaN and SiC

Inevitability of Near Chip-Scale SMD Packaging for Power GaN and SiC

This article is a Q&A aiming to provide insight into the benefits of WBG near chip-scale package capability and its ultimate form, the μMaxPak…


Gate Drive Optocouplers for GaN Power Devices

Gate Drive Optocouplers for GaN Power Devices

This article discusses Gallium Nitride Technology and wide variety of designs of different competing companies.


NexGen to make Vertical GaN FETs with AIXTRON MOCVD Technology

NexGen to make Vertical GaN FETs with AIXTRON MOCVD Technology


News Jul 21, 2018 by Paul Shepard
Platform for Automotive Traction Inverters can use Si or SiC Devices

Platform for Automotive Traction Inverters can use Si or SiC Devices


News Jul 20, 2018 by Paul Shepard
x-GaN 2.0: The Destination FiT10 is Demonstrably Exceeded

x-GaN 2.0: The Destination FiT10 is Demonstrably Exceeded

This article highlights Panasonic X-GaNTM transistors that is called as HD-GiT that aimed for power converters application in the ~100 W to ~5-6 kW…


Utilizing SiC Traction Technology Inverters in Automotive Applications

Utilizing SiC Traction Technology Inverters in Automotive Applications

This article focuses on presenting the benefits of a newly developed SiC power module and the utilization of this module in a powertrain inverter


GaN/SiC RF Power Modules Help Simplify Radar Amplifier Design

GaN/SiC RF Power Modules Help Simplify Radar Amplifier Design


News Jul 10, 2018 by Paul Shepard
Interview Littelfuse Discusses Acquisition of IXYS Future of SiC and NonSiC Components

Interview Littelfuse Discusses Acquisition of IXYS Future of SiC and NonSiC Components

This article presents the discussions from an interview of Littelfuse on its acquisition of IXYS.


tech insights Jul 06, 2018 by Littelfuse
SDK’s Third Expansion of SiC Wafer Production Facilities in Two Years

SDK’s Third Expansion of SiC Wafer Production Facilities in Two Years


News Jul 03, 2018 by Paul Shepard
A Novel Circuit Topology for Turning a ‘Normally On’ GaN Transistor into ‘Normally Off’

A Novel Circuit Topology for Turning a ‘Normally On’ GaN Transistor into ‘Normally Off’

This article discusses how D-mode GaN transistors make themselves excellent building blocks for the next generation power conversion systems.


GT Advanced Technologies Opens New Silicon Carbide Manufacturing Facility

GT Advanced Technologies Opens New Silicon Carbide Manufacturing Facility


News Jun 28, 2018 by Paul Shepard
SiC MOSFETs enable 240A Pulses at 60Hz Repetition

SiC MOSFETs enable 240A Pulses at 60Hz Repetition


News Jun 26, 2018 by Paul Shepard
DCM™ 1000X Designed to Meet the Future SiC Demand of Electric Vehicle Drive Trains

DCM™ 1000X Designed to Meet the Future SiC Demand of Electric Vehicle Drive Trains

This article discusses Danfoss' DCM technology for traction applications and its electrical performance.


High-Power SiC BJTs among Finalists in NASA iTech Challenge

High-Power SiC BJTs among Finalists in NASA iTech Challenge


News Jun 19, 2018 by Paul Shepard
Platform Integrates 0.1um GaAs pHEMT with Monolithic PIN and Vertical Schottky Diodes

Platform Integrates 0.1um GaAs pHEMT with Monolithic PIN and Vertical Schottky Diodes


News Jun 13, 2018 by Paul Shepard
GaN FET Driver Delivers Fast Switching to Solid-State LiDAR Systems

GaN FET Driver Delivers Fast Switching to Solid-State LiDAR Systems

Wireless Power Market Advances with GaN Systems’ 100W and 300W Solutions

Wireless Power Market Advances with GaN Systems’ 100W and 300W Solutions


News Jun 08, 2018 by Paul Shepard
Interview ROHM Focuses on SiC Plus for Automotive and Industrial Markets

Interview ROHM Focuses on SiC Plus for Automotive and Industrial Markets

Bodo´s Power Systems recently interviewed Christian André, Heiko Metzger, Dr. Andreas Bauknecht, and Aly Mashaly, the management of ROHM Europe…


Enhancement-Mode Vertical Gallium-Oxide Transistor with Breakdown >1kV

Enhancement-Mode Vertical Gallium-Oxide Transistor with Breakdown >1kV


News Jun 07, 2018 by Paul Shepard
Infineon Previews 400V and 600V GaN Switches & Galvanically-Isolated Drivers

Infineon Previews 400V and 600V GaN Switches & Galvanically-Isolated Drivers


News Jun 07, 2018 by Paul Shepard