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SiC Devices and Gate Drivers to be Major Focus for ROHM at electronica 2018

SiC Devices and Gate Drivers to be Major Focus for ROHM at electronica 2018


News Aug 24, 2018 by Paul Shepard
2.5kW GaN-Based Half-Bridge Evaluation Board

2.5kW GaN-Based Half-Bridge Evaluation Board

PowerSphyr and GaN Systems Collaborate on Wireless Charging

PowerSphyr and GaN Systems Collaborate on Wireless Charging


News Aug 15, 2018 by Paul Shepard
PowerSphyr and GaN Systems Lead the Wireless Charging Revolution

PowerSphyr and GaN Systems Lead the Wireless Charging Revolution

PowerSphyr recently announced a strategic agreement to bring state-of-the-art GaN-based wireless power systems.


new products Aug 15, 2018 by GaN Systems
PowerAmerica Seeking Help Accelerate GaN and SiC Adoption

PowerAmerica Seeking Help Accelerate GaN and SiC Adoption


News Aug 13, 2018 by Paul Shepard
Tripling the Output Power of GaN HEMTs Extends Radar Range 2.3X

Tripling the Output Power of GaN HEMTs Extends Radar Range 2.3X


News Aug 13, 2018 by Paul Shepard
Energize the Grid with Texas Instruments LMG3410 600V GaN Power Stage

Energize the Grid with Texas Instruments LMG3410 600V GaN Power Stage

GaN technology continues to help designers create smaller, more efficient power converters and enable the next generation of high-density power…


$2 Million US ARL Grant to Make 10kV to 15kV SiC MOSFETs

$2 Million US ARL Grant to Make 10kV to 15kV SiC MOSFETs


News Aug 09, 2018 by Paul Shepard
NASA Studies Space Applications for GaN Crystals

NASA Studies Space Applications for GaN Crystals


News Aug 08, 2018 by Paul Shepard
PowerAmerica Funds New Projects to Advance Wide Bandgap Technology

PowerAmerica Funds New Projects to Advance Wide Bandgap Technology


News Aug 07, 2018 by Paul Shepard
Kyma Working with IEMN to Reduce Leakage Currents in HV GaN-on-Si HEMTs

Kyma Working with IEMN to Reduce Leakage Currents in HV GaN-on-Si HEMTs


News Aug 02, 2018 by Paul Shepard
Galvanic-Isolated Gate Driver Controls and Protects SiC or Si Power Transistors

Galvanic-Isolated Gate Driver Controls and Protects SiC or Si Power Transistors

SiC Power Devices are First to Meet Automotive AEC-Q101 Standards

SiC Power Devices are First to Meet Automotive AEC-Q101 Standards

9kW GaN Half-Bridge Eval Board without Paralleling

9kW GaN Half-Bridge Eval Board without Paralleling


News Jul 31, 2018 by Paul Shepard
Inevitability of Near Chip-Scale SMD Packaging for Power GaN and SiC

Inevitability of Near Chip-Scale SMD Packaging for Power GaN and SiC

This article is a Q&A aiming to provide insight into the benefits of WBG near chip-scale package capability and its ultimate form, the μMaxPak…


Gate Drive Optocouplers for GaN Power Devices

Gate Drive Optocouplers for GaN Power Devices

This article discusses Gallium Nitride Technology and wide variety of designs of different competing companies.


NexGen to make Vertical GaN FETs with AIXTRON MOCVD Technology

NexGen to make Vertical GaN FETs with AIXTRON MOCVD Technology


News Jul 21, 2018 by Paul Shepard
Platform for Automotive Traction Inverters can use Si or SiC Devices

Platform for Automotive Traction Inverters can use Si or SiC Devices


News Jul 20, 2018 by Paul Shepard
x-GaN 2.0: The Destination FiT10 is Demonstrably Exceeded

x-GaN 2.0: The Destination FiT10 is Demonstrably Exceeded

This article highlights Panasonic X-GaNTM transistors that is called as HD-GiT that aimed for power converters application in the ~100 W to ~5-6 kW…


Utilizing SiC Traction Technology Inverters in Automotive Applications

Utilizing SiC Traction Technology Inverters in Automotive Applications

This article focuses on presenting the benefits of a newly developed SiC power module and the utilization of this module in a powertrain inverter