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GaN Enables Small & Fast USB Wall-Mount Chargers

GaN Enables Small & Fast USB Wall-Mount Chargers

Transphorm Ships Over a Quarter of a Million GaN Power Devices

Transphorm Ships Over a Quarter of a Million GaN Power Devices


News Dec 13, 2018 by Paul Shepard
GaN-Enabled Wirelessly Powered Systems for the Home and High-Resolution LiDAR

GaN-Enabled Wirelessly Powered Systems for the Home and High-Resolution LiDAR


News Dec 12, 2018 by Paul Shepard
28GHz GaN Front-End Module Targets 5G Rollout

28GHz GaN Front-End Module Targets 5G Rollout

GaN Enables 14mm-Thin 45W Wall Charger

GaN Enables 14mm-Thin 45W Wall Charger

650V D-Mode GaN HEMTs Produced on 200mm Gan-on-Si Wafers with CMOS-Compatible Process

650V D-Mode GaN HEMTs Produced on 200mm Gan-on-Si Wafers with CMOS-Compatible Process


News Dec 06, 2018 by Paul Shepard
New Mechanism for Enhancing Reliability of SiC Power Devices Detailed at IEDM

New Mechanism for Enhancing Reliability of SiC Power Devices Detailed at IEDM


News Dec 06, 2018 by Paul Shepard
IEEE Energy Conversion Congress and Expo 2018

IEEE Energy Conversion Congress and Expo 2018

Energy Conversion Congress and Expo (ECCE)—the foremost IEEE conference in the field of electrical and electromechanical energy…


tech insights Dec 05, 2018 by Gary Dolny
High-Voltage GaN Helps Inergy Disrupt the Solar Power Generator Market

High-Voltage GaN Helps Inergy Disrupt the Solar Power Generator Market


News Dec 04, 2018 by Paul Shepard
TowerJazz and KERI Prototyping SiC FET Gate Driver IC on 0.18um SOI Platform

TowerJazz and KERI Prototyping SiC FET Gate Driver IC on 0.18um SOI Platform


News Dec 03, 2018 by Paul Shepard
UnitedSiC Adds Kelvin Connection Packages into SiC FET Offering

UnitedSiC Adds Kelvin Connection Packages into SiC FET Offering


News Dec 03, 2018 by Paul Shepard
UnitedSiC Introduces Kelvin Connection Parts into UF3C FAST FET Series

UnitedSiC Introduces Kelvin Connection Parts into UF3C FAST FET Series

UnitedSiC expands its UF3C FAST Series product offering by introducing an additional range of 650 V and 1200 V high-performance silicon carbide FETs


EPC Expands Asian Team to Support Accelerating GaN Growth

EPC Expands Asian Team to Support Accelerating GaN Growth


News Nov 28, 2018 by Paul Shepard
CoolGaN™ 600V Half-Bridge Evaluation Platform Featuring GaN EiceDRIVER™

CoolGaN™ 600V Half-Bridge Evaluation Platform Featuring GaN EiceDRIVER™


News Nov 27, 2018 by Paul Shepard
Hermetic, High-Voltage Cascode GaN Power FETs

Hermetic, High-Voltage Cascode GaN Power FETs

Reduce Size and Increase Efficiency with GaN-based LLC Solutions

Reduce Size and Increase Efficiency with GaN-based LLC Solutions

GaN High Electron Mobility Transistors (GaN HEMT) have a lower driving loss and shorter deadtime circuit benefits due to significantly…


Modular Capacitor Assemblies Target GaN- and SiC-based Converters

Modular Capacitor Assemblies Target GaN- and SiC-based Converters


News Nov 20, 2018 by Paul Shepard
Development of a Wideband High-Precision Current Sensor

Development of a Wideband High-Precision Current Sensor

In the field of power electronics, especially within the automotive and railway segments, the miniaturization and heightened efficiency of…


3-5 Power Electronics Secures New Financing for High-Voltage GaAs

3-5 Power Electronics Secures New Financing for High-Voltage GaAs


News Nov 14, 2018 by Paul Shepard
1700V SiC Power Module Claims High Reliability in Extreme Environments

1700V SiC Power Module Claims High Reliability in Extreme Environments