Energy Conversion Congress and Expo (ECCE)—the foremost IEEE conference in the field of electrical and electromechanical energy…
Energy Conversion Congress and Expo (ECCE)—the foremost IEEE conference in the field of electrical and electromechanical energy…
UnitedSiC expands its UF3C FAST Series product offering by introducing an additional range of 650 V and 1200 V…
UnitedSiC expands its UF3C FAST Series product offering by introducing an additional range of 650 V and 1200 V high-performance silicon carbide FETs
GaN High Electron Mobility Transistors (GaN HEMT) have a lower driving loss and shorter deadtime circuit benefits due…
GaN High Electron Mobility Transistors (GaN HEMT) have a lower driving loss and shorter deadtime circuit benefits due to significantly…
In the field of power electronics, especially within the automotive and railway segments, the miniaturization and…
In the field of power electronics, especially within the automotive and railway segments, the miniaturization and heightened efficiency of…
Wide bandgap GaN and SiC devices are expected to experience high levels of growth in applications ranging from power…
Wide bandgap GaN and SiC devices are expected to experience high levels of growth in applications ranging from power conversion to RF transistors…
UnitedSiC announced the launch of its UF3C FAST series of 650V and 1200V high-performance silicon carbide FETs in a…
UnitedSiC announced the launch of its UF3C FAST series of 650V and 1200V high-performance silicon carbide FETs in a standard TO-247-3L package.
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