GaN Systems announced the availability of the GS-065 low current transistor line.
GaN Systems announced the availability of the GS-065 low current transistor line.
This article discusses the performance benefits arising from the use of a low-inductive SMD package with a Kelvin-Source…
This article discusses the performance benefits arising from the use of a low-inductive SMD package with a Kelvin-Source pin for fast SiC MOSFETs.
Hans Keller joins Höganäs as President Product Area Surface & Joining Technologies on 1 March 2019.
Hans Keller joins Höganäs as President Product Area Surface & Joining Technologies on 1 March 2019.
Power Integrations, the leader in gate-driver technology for medium- and high-voltage inverter applications, today…
Power Integrations, the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced the SIC1182K…
JEDEC announces the publication of JEP173: Dynamic On-Resistance Test Method Guidelines for GaN HEMT Based Power…
JEDEC announces the publication of JEP173: Dynamic On-Resistance Test Method Guidelines for GaN HEMT Based Power Conversion Devices
This article focuses on the switching behavior of SiC devices and compares Full SiC and Hybrid SiC with the behavior of a…
This article focuses on the switching behavior of SiC devices and compares Full SiC and Hybrid SiC with the behavior of a silicon device.
STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications,…
STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, today announced it has signed…