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SiC Power Components Optimized for Auto and Industrial Designs

SiC Power Components Optimized for Auto and Industrial Designs

News Mar 12, 2019 by Scott McMahan
20 Million GaN Reliability Hours at Texas Instruments

20 Million GaN Reliability Hours at Texas Instruments

News Mar 11, 2019 by Paul Shepard
Power America Showcases Wide Bandgap Power Electronics Progress at APEC 2019

Power America Showcases Wide Bandgap Power Electronics Progress at APEC 2019

News Mar 07, 2019 by Scott McMahan
Low-Profile 8A/650V SiC Schottkys for Extremely Compact and Efficient Power Supplies

Low-Profile 8A/650V SiC Schottkys for Extremely Compact and Efficient Power Supplies

new products Mar 07, 2019 by Paul Shepard
EPC to Present GaN Vision at APEC 2019

EPC to Present GaN Vision at APEC 2019

new products Mar 07, 2019 by Scott McMahan
Transphorms Gen III GaN Platform Earns Automotive Qualification

Transphorms Gen III GaN Platform Earns Automotive Qualification

Transphorm Inc.—the leader in the design and manufacturing of the highest reliability and first JEDEC- and AEC-Q101 qualified 650 V gallium…

new products Mar 07, 2019 by Transphorm
3.5A to 11A, 650V GaN Transistors Target Consumer Applications

3.5A to 11A, 650V GaN Transistors Target Consumer Applications

new products Mar 06, 2019 by Scott McMahan
GaN Systems Debuts Suite of Low Cost High Performance GaN Power Transistors

GaN Systems Debuts Suite of Low Cost High Performance GaN Power Transistors

GaN Systems announced the availability of the GS-065 low current transistor line.

new products Mar 05, 2019 by GaN Systems
GaN Power ICs Handle 27W to 3.2kW for Next-Gen Power Converters

GaN Power ICs Handle 27W to 3.2kW for Next-Gen Power Converters

News Mar 04, 2019 by Scott McMahan
Automotive SiC MOSFETs in LowInductive SMD Package with Kelvin Source

Automotive SiC MOSFETs in LowInductive SMD Package with Kelvin Source

This article discusses the performance benefits arising from the use of a low-inductive SMD package with a Kelvin-Source pin for fast SiC MOSFETs.

Technical Articles Mar 04, 2019 by Christian Felgemacher
Hans Keller joins Höganäs as new President for Product Area Surface and Joining Technologies

Hans Keller joins Höganäs as new President for Product Area Surface and Joining Technologies

Hans Keller joins Höganäs as President Product Area Surface & Joining Technologies on 1 March 2019.

new products Mar 01, 2019 by Hoganas
New SCALE-iDriver SiC-MOSFET Gate Driver from Power Integrations Maximizes Efficiency Improves Safety

New SCALE-iDriver SiC-MOSFET Gate Driver from Power Integrations Maximizes Efficiency Improves Safety

Power Integrations, the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced the SIC1182K…

new products Mar 01, 2019 by Power Integrations
JEDEC Wide Bandgap Power Semiconductor Committee Publishes First Document Test Method for Dynamic Resistance of GaN HEMT

JEDEC Wide Bandgap Power Semiconductor Committee Publishes First Document Test Method for Dynamic Resistance of GaN HEMT

 JEDEC announces the publication of JEP173: Dynamic On-Resistance Test Method Guidelines for GaN HEMT Based Power Conversion Devices

new products Mar 01, 2019 by JEDEC
14mm PD GaN Charger at MWC Barcelona 2019

14mm PD GaN Charger at MWC Barcelona 2019

News Feb 28, 2019 by Paul Shepard
Transphorm’s Gen III GaN Platform Earns Automotive Qualification

Transphorm’s Gen III GaN Platform Earns Automotive Qualification

News Feb 28, 2019 by Paul Shepard
8A SiC MOSFET Gate Driver Supports Inverters of Several Hundred kW

8A SiC MOSFET Gate Driver Supports Inverters of Several Hundred kW

new products Feb 26, 2019 by Scott McMahan
EPC Publishes 10th Reliability Report Highlighting GaN Device Testing Beyond AEC-Q101

EPC Publishes 10th Reliability Report Highlighting GaN Device Testing Beyond AEC-Q101

News Feb 26, 2019 by Paul Shepard
Dynamic Characterization Platform for SiC Power MOSFETs and Schottky Diodes

Dynamic Characterization Platform for SiC Power MOSFETs and Schottky Diodes

new products Feb 26, 2019 by Paul Shepard
MACOM and STMicro Expand GaN-on-Si Capacity for 5G Rollout

MACOM and STMicro Expand GaN-on-Si Capacity for 5G Rollout

News Feb 25, 2019 by Scott McMahan
GE Research Awarded $3 Million to Develop High-Voltage SiC Super Junction MOSFET

GE Research Awarded $3 Million to Develop High-Voltage SiC Super Junction MOSFET

News Feb 23, 2019 by Scott McMahan