This article examines the hard switching turn-on and turn-off mechanisms in this device, to give the users some insight…
This article examines the hard switching turn-on and turn-off mechanisms in this device, to give the users some insight the difference of MOSFETs…
Overview ECPE wide bandgap user forums have established as an international event where users - i.e., engineers…
Overview ECPE wide bandgap user forums have established as an international event where users - i.e., engineers developing advanced power…
This article describes how Transphorm Inc. developed a 63 mOhm 600V GaN HEMT (high electron mobility transistor) to be…
This article describes how Transphorm Inc. developed a 63 mOhm 600V GaN HEMT (high electron mobility transistor) to be packaged in a TO-247.
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