EEPower

Latest Wide Bandgap Articles

Categories

BTRAN  BiDirectional BiPolar Junction Transistor

BTRAN BiDirectional BiPolar Junction Transistor

This article discusses the functions and applications of Bi-directional Bipolar Junction Transistor (B-TRAN), a new topology for power semiconductors.


GaN gets EPC CEO Alex Lidow 2015 SEMI Award

GaN gets EPC CEO Alex Lidow 2015 SEMI Award


News Jan 13, 2016 by Jeff Shepard
SunEdison to distribute EpiGaN’s GaN-on-Si epi wafers

SunEdison to distribute EpiGaN’s GaN-on-Si epi wafers


News Jan 12, 2016 by Jeff Shepard
GaN-on-Si Technology Wins Innovation Award

GaN-on-Si Technology Wins Innovation Award


News Jan 10, 2016 by Jeff Shepard
Expanding Applications for SiC in 2015

Expanding Applications for SiC in 2015

Six for SiC – or is it too soon?

Six for SiC – or is it too soon?

This article discusses the best time to switch from 4 to 6-inch wafers for the fabrication of Silicon Carbide (SiC) power semiconductor devices.


Building Blocks for GaN Power Switches

Building Blocks for GaN Power Switches


News Dec 30, 2015 by Jeff Shepard
Littelfuse Invests in Silicon-Carbide Start-up

Littelfuse Invests in Silicon-Carbide Start-up


News Dec 17, 2015 by Jeff Shepard
Give the Gift of GaN - PowerPulse Exclusive

Give the Gift of GaN - PowerPulse Exclusive

GE Aviation gets U.S. Army Contract for SiC Power R&D

GE Aviation gets U.S. Army Contract for SiC Power R&D


News Dec 15, 2015 by Jeff Shepard
200mm GaN-on-Si Technology Closer to Manufacturing

200mm GaN-on-Si Technology Closer to Manufacturing


News Dec 14, 2015 by Jeff Shepard
GaN enables Smallest Most Efficient 12-W AC Adapter

GaN enables Smallest Most Efficient 12-W AC Adapter


News Dec 14, 2015 by Jeff Shepard
GaN Wireless Power Handbook 2nd Edition from EPC

GaN Wireless Power Handbook 2nd Edition from EPC


News Dec 14, 2015 by Jeff Shepard
Advantages of the 1200 V SiC Schottky Diode with MPS Design

Advantages of the 1200 V SiC Schottky Diode with MPS Design

This article describes how consistent innovations in device design and assembly techniques improve performance, reliability and cost position of…


GaN Systems Announces 10X Production Increase at TSMC

GaN Systems Announces 10X Production Increase at TSMC


News Dec 01, 2015 by Jeff Shepard
1200V / 300A SiC Power Module

1200V / 300A SiC Power Module

650V / 15mOhm GaN Switch now Sampling

650V / 15mOhm GaN Switch now Sampling

1700V SiC MOSFET from Wolfspeed

1700V SiC MOSFET from Wolfspeed

Richardson RFPD, Inc. announced the availability from stock and full design support capabilities for a new 1700V SiC MOSFET from Wolfspeed, a Cree…


Soraa Opening new GaN-on-GaN Fab in New York

Soraa Opening new GaN-on-GaN Fab in New York


News Nov 03, 2015 by Jeff Shepard
700 V SiC MOSFETs from Microsemi

700 V SiC MOSFETs from Microsemi

The 700 V/70 A SiC MOSFET APT70SM70 from Microsemi/Eurocomp is designed to help customers develop solutions that operate at higher frequency and…


new products Nov 01, 2015 by Microsemi