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GaN Wireless Power Handbook 2nd Edition from EPC

December 14, 2015 by Jeff Shepard

Efficient Power Conversion Corporation announces the publication of the Second Edition of the Wireless Power Handbook. This edition is a practical engineering handbook designed to provide power system design engineers valuable experiences and points of reference critical to understanding and designing highly efficient wireless power systems using gallium nitride (GaN) transistors. The Second Edition is an updated and expanded guide to designing efficient amplifiers for a wireless power transfer systems taking advantage of the superior performance of GaN power transistors.

As a supplement to EPC’s GaN Transistors for Efficient Power Conversion, this updated and expanded practical guide provides step-by-step analysis on the use of GaN transistors in wireless power transfer systems. Topics covered include how to effectively compare component devices, such as eGaN FETs and MOSFETs, when used in an amplifier design. This comparison, complete with experimental verification, illustrates the superiority of eGaN FETs over MOSFETs in this high performance application.

This second edition has been expanded to include the latest work on AirFuel™ Alliance class 2 and class 3 transmitters, adaptive tuning, radiated EMI, multi-mode wireless power systems, and control strategies. There are also wireless power systems demonstrated using the latest eGaN® FETs and integrated circuits that set new efficiency benchmarks as well as reduce overall system costs. There is still much more to accomplish as this fast moving technology evolves, the purpose of this second edition is to share the latest information on the subject.

Wireless Power Handbook: a Supplement to GaN Transistors for Efficient Power Conversion, 2nd Edition is available for $39.95 and can be purchased from Digi-Key and Amazon.com.

Michael de Rooij, is Vice President of Applications Engineering at Efficient Power Conversion Corporation (EPC). Prior to joining EPC, he worked at Windspire Energy and the GE Global Research Center. Dr. de Rooij received his Ph.D. from the Rand Afrikaans University and conducted postdoctoral studies on power electronic integration, packaging and a high frequency MOSFET Gate-driver at the Center for Power Electronic Systems (CPES) at Virginia Tech. He is a Senior Member of the IEEE and has authored over 25 publications, most recently co-authoring GaN Transistors for Efficient Power Conversion. He has been granted 21 US and International patents and 19 US and International pending patent applications.