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Expanded SiC Schottky Diode Line Reduces Switching Losses Increases Efficiency and Robustness

Expanded SiC Schottky Diode Line Reduces Switching Losses Increases Efficiency and Robustness

Littelfuse, Inc. introduced four new series of 1200V silicon carbide (SiC) Schottky Diodes from its GEN2 product family

new products Jan 16, 2018 by Littelfuse
3.3 kV Full SiC MOSFETs – Towards High-Performance Traction Inverters

3.3 kV Full SiC MOSFETs – Towards High-Performance Traction Inverters

This article highlights the benefits of using the new Full SiC MOSFETS in traction applications and flexible converter designs.

Technical Articles Jan 13, 2018 by Nils Soltau
GaN enables Ultra Wide-Band Linearized Doherty Amplifier

GaN enables Ultra Wide-Band Linearized Doherty Amplifier

new products Jan 11, 2018 by Paul Shepard
Next Generation Silicon Carbide Power Device with 3DSiC Technology

Next Generation Silicon Carbide Power Device with 3DSiC Technology

Ascatron provides next generation Silicon Carbide (SiC) power semiconductors using its proprietary 3DSiC® technology with a quality and…

new products Jan 11, 2018 by Ascatron
GaN Enables 1600W Titanium Power Supply for Gamers

GaN Enables 1600W Titanium Power Supply for Gamers

News Jan 09, 2018 by Paul Shepard
GaN-Enabled Large-Area Wireless Power and High-Resolution LiDAR

GaN-Enabled Large-Area Wireless Power and High-Resolution LiDAR

News Jan 07, 2018 by Paul Shepard
Half-Bridge Reference Design for Evaluating Si, SiC and GaN Power Devices

Half-Bridge Reference Design for Evaluating Si, SiC and GaN Power Devices

new products Dec 22, 2017 by Paul Shepard
Single Device Capable of Dual Transistor Operation Saves Energy

Single Device Capable of Dual Transistor Operation Saves Energy

News Dec 21, 2017 by Paul Shepard
40V GaN Power Transistor is 8X Smaller than Equivalently-Rated MOSFETS

40V GaN Power Transistor is 8X Smaller than Equivalently-Rated MOSFETS

new products Dec 19, 2017 by Paul Shepard
Silicon-Carbide Enables UPS to Achieve Highest Energy Star Listing

Silicon-Carbide Enables UPS to Achieve Highest Energy Star Listing

News Dec 12, 2017 by Paul Shepard
Delta Joins BMW i Ventures as Strategic Investor in GaN Systems

Delta Joins BMW i Ventures as Strategic Investor in GaN Systems

News Dec 11, 2017 by Paul Shepard
Diamond and SiC Bonded at Room Temp. Enabling Radar Performance Boost

Diamond and SiC Bonded at Room Temp. Enabling Radar Performance Boost

News Dec 08, 2017 by Paul Shepard
Give the Gift of GaN Class-D Audio

Give the Gift of GaN Class-D Audio

new products Dec 08, 2017 by Paul Shepard
5kV GaN Power Devices for Distribution-Level Voltages in the Utility Grid

5kV GaN Power Devices for Distribution-Level Voltages in the Utility Grid

News Dec 07, 2017 by Paul Shepard
Factors Quantified for Reducing SiC MOSFET Resistance by Two-Thirds

Factors Quantified for Reducing SiC MOSFET Resistance by Two-Thirds

News Dec 05, 2017 by Paul Shepard
Full SiC Power Modules for Formula E Racing Team Venturi

Full SiC Power Modules for Formula E Racing Team Venturi

News Dec 01, 2017 by Paul Shepard
GaN FETs Drive 150-Amp LiDAR Dev Board and Deliver 5-nsec. Pulses

GaN FETs Drive 150-Amp LiDAR Dev Board and Deliver 5-nsec. Pulses

News Nov 30, 2017 by Paul Shepard
Carbon-Nanotube Sheets for Heat-Dissipation in SiC-based Vehicle Systems

Carbon-Nanotube Sheets for Heat-Dissipation in SiC-based Vehicle Systems

News Nov 30, 2017 by Paul Shepard
Transistor Arrays Handle up to 50V / 0.5A with 40% Lower Power

Transistor Arrays Handle up to 50V / 0.5A with 40% Lower Power

new products Nov 21, 2017 by Paul Shepard
100-mm Diameter Free-Standing GaN from Kyma / QROMIS Partnership

100-mm Diameter Free-Standing GaN from Kyma / QROMIS Partnership

News Nov 14, 2017 by Paul Shepard