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Advanced Synchronous Reverse Blocking New Circuit Topologies for Highly Efficient Power Converters

Advanced Synchronous Reverse Blocking New Circuit Topologies for Highly Efficient Power Converters

This article introduces technologies enabling developers to significantly reduce the switching losses in power converters, thus reducing costs.

Technical Articles Nov 13, 2017 by Ralf Hauschild
Beryllium-Doped Gallium-Nitride for Higher-Power Devices

Beryllium-Doped Gallium-Nitride for Higher-Power Devices

News Nov 10, 2017 by Paul Shepard
Kyma Demonstrates High Quality 200-mm GaN on QST® Templates

Kyma Demonstrates High Quality 200-mm GaN on QST® Templates

News Nov 07, 2017 by Paul Shepard
SiC Devices, Power in 3D Packaging, and More at IEDM 2017

SiC Devices, Power in 3D Packaging, and More at IEDM 2017

News Nov 01, 2017 by Paul Shepard
Switch 100kVA at 50kHz with SiC Power Evaluation Platform

Switch 100kVA at 50kHz with SiC Power Evaluation Platform

News Oct 23, 2017 by Paul Shepard
GaN Systems’ Eval Board Simplifies MegaHertz Power

GaN Systems’ Eval Board Simplifies MegaHertz Power

News Oct 20, 2017 by Paul Shepard
12V-to-Load DC-DC Dev Board Features 10MHz GaN Half-Bridge

12V-to-Load DC-DC Dev Board Features 10MHz GaN Half-Bridge

News Oct 20, 2017 by Paul Shepard
Cree aiming to Double SiC Capacity at Wolfspeed

Cree aiming to Double SiC Capacity at Wolfspeed

News Oct 19, 2017 by Paul Shepard
Navitas Announces High-Volume Capacity for GaN ICs

Navitas Announces High-Volume Capacity for GaN ICs

News Oct 18, 2017 by Paul Shepard
Second-Generation 650V SiC Schottky Barrier Diodes in DPAK

Second-Generation 650V SiC Schottky Barrier Diodes in DPAK

new products Oct 17, 2017 by Paul Shepard
GaN FET Driver Brings Fastest Switching Speeds to Class-D Audio

GaN FET Driver Brings Fastest Switching Speeds to Class-D Audio

new products Oct 17, 2017 by Paul Shepard
EPC Names MIGVAN to Represent it’s GaN FETs and ICs in Isreal

EPC Names MIGVAN to Represent it’s GaN FETs and ICs in Isreal

News Oct 13, 2017 by Paul Shepard
Sumitomo Electric Launches 99% Defect Free SiC Epitaxial Wafers

Sumitomo Electric Launches 99% Defect Free SiC Epitaxial Wafers

News Oct 12, 2017 by Paul Shepard
GaN-on-Si RF Systems Technology and Power Devices Advance

GaN-on-Si RF Systems Technology and Power Devices Advance

News Oct 10, 2017 by Paul Shepard
Danfoss Preparing for Production of SiC Power Modules in NY

Danfoss Preparing for Production of SiC Power Modules in NY

News Oct 09, 2017 by Paul Shepard
WIN Enhances 0.25µm Gallium Nitride Power Process

WIN Enhances 0.25µm Gallium Nitride Power Process

News Oct 09, 2017 by Paul Shepard
Infineon GaN Switches enable 98% Efficient 3kW AC-DCs from Eltek

Infineon GaN Switches enable 98% Efficient 3kW AC-DCs from Eltek

News Oct 05, 2017 by Paul Shepard
GaN Systems and Taiwan’s MOEA to Collaborate on GaN Commercialization

GaN Systems and Taiwan’s MOEA to Collaborate on GaN Commercialization

News Oct 03, 2017 by Paul Shepard
SiC MOSFET Provides Ultra-Fast Switching in Power Electronics

SiC MOSFET Provides Ultra-Fast Switching in Power Electronics

Littelfuse, Inc. introduces its first series of silicon carbide (SiC) MOSFETs, the latest addition to the company’s growing power semiconductor line

new products Oct 03, 2017 by Littelfuse
1200V SiC FET Provides Ultra-Fast Switching and Enhanced Robustness

1200V SiC FET Provides Ultra-Fast Switching and Enhanced Robustness

new products Oct 02, 2017 by Paul Shepard