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Sumitomo Electric Launches 99% Defect Free SiC Epitaxial Wafers

Sumitomo Electric Launches 99% Defect Free SiC Epitaxial Wafers

News Oct 12, 2017 by Paul Shepard
GaN-on-Si RF Systems Technology and Power Devices Advance

GaN-on-Si RF Systems Technology and Power Devices Advance

News Oct 10, 2017 by Paul Shepard
Danfoss Preparing for Production of SiC Power Modules in NY

Danfoss Preparing for Production of SiC Power Modules in NY

News Oct 09, 2017 by Paul Shepard
WIN Enhances 0.25µm Gallium Nitride Power Process

WIN Enhances 0.25µm Gallium Nitride Power Process

News Oct 09, 2017 by Paul Shepard
Infineon GaN Switches enable 98% Efficient 3kW AC-DCs from Eltek

Infineon GaN Switches enable 98% Efficient 3kW AC-DCs from Eltek

News Oct 05, 2017 by Paul Shepard
GaN Systems and Taiwan’s MOEA to Collaborate on GaN Commercialization

GaN Systems and Taiwan’s MOEA to Collaborate on GaN Commercialization

News Oct 03, 2017 by Paul Shepard
SiC MOSFET Provides Ultra-Fast Switching in Power Electronics

SiC MOSFET Provides Ultra-Fast Switching in Power Electronics

Littelfuse, Inc. introduces its first series of silicon carbide (SiC) MOSFETs, the latest addition to the company’s growing power semiconductor line

new products Oct 03, 2017 by Littelfuse
1200V SiC FET Provides Ultra-Fast Switching and Enhanced Robustness

1200V SiC FET Provides Ultra-Fast Switching and Enhanced Robustness

new products Oct 02, 2017 by Paul Shepard
PPM Power Signs Power Modules and SiC Agreement with SanRex

PPM Power Signs Power Modules and SiC Agreement with SanRex

News Sep 30, 2017 by Paul Shepard
Industrial ATX Power with Digital Control, SiC Rectifiers and Remote Monitoring

Industrial ATX Power with Digital Control, SiC Rectifiers and Remote Monitoring

new products Sep 28, 2017 by Paul Shepard
Dr. Hiroyuki Matsunami Wins Honda Prize for Pioneering SiC Research

Dr. Hiroyuki Matsunami Wins Honda Prize for Pioneering SiC Research

News Sep 27, 2017 by Paul Shepard
Sixth-Generation 650V SiC Schottky Diodes have Faster Switching

Sixth-Generation 650V SiC Schottky Diodes have Faster Switching

new products Sep 25, 2017 by Paul Shepard
Mitsubishi Develops SiC Power Device with Record Power Efficiency

Mitsubishi Develops SiC Power Device with Record Power Efficiency

News Sep 21, 2017 by Paul Shepard
GaN FETs enable Reimagining Servos through Redesigned Power Electronics

GaN FETs enable Reimagining Servos through Redesigned Power Electronics

News Sep 20, 2017 by Paul Shepard
GaN Power ICs Enable 5X Smaller and Lighter 65W USB-PD Laptop Adapter

GaN Power ICs Enable 5X Smaller and Lighter 65W USB-PD Laptop Adapter

News Sep 19, 2017 by Paul Shepard
Isolated DC-DCs Optimized for Fast-Switching GaN Drivers

Isolated DC-DCs Optimized for Fast-Switching GaN Drivers

new products Sep 18, 2017 by Paul Shepard
Ascatron enters SiC Power Device Market with Diodes up to 10kV

Ascatron enters SiC Power Device Market with Diodes up to 10kV

News Sep 18, 2017 by Paul Shepard
SiC Devices Poised and Ready for Harsh Environment Applications

SiC Devices Poised and Ready for Harsh Environment Applications

This article discusses the challenges of SiC devices under high humidity conditions and introduces the new WAS300M12BM2 Wolfspeed power module.

Technical Articles Sep 17, 2017 by Guy Moxey
SDK to Expand Capacity for High-Grade SiC Epitaxial Wafers

SDK to Expand Capacity for High-Grade SiC Epitaxial Wafers

News Sep 14, 2017 by Paul Shepard
New Process for Making SiC Power Devices Opens Market to More Competition

New Process for Making SiC Power Devices Opens Market to More Competition

News Sep 14, 2017 by Paul Shepard