EEPower

Latest Silicon Carbide Articles

Categories

A High Temperature Gate Driver for Half Bridge SiC MOSFET 62mm Power Modules

A High Temperature Gate Driver for Half Bridge SiC MOSFET 62mm Power Modules

This article features CISSOID CMT-TIT8243 high temperature high voltage isolated Gate Driver for 62mm SiC MOSFET power modules with High peak gate…


Cree to Establish SiC Corridor on the East Coast of the United States

Cree to Establish SiC Corridor on the East Coast of the United States


News Sep 23, 2019 by Paul Shepard
Cree Announces Plan to Build World’s Largest SiC Device Manufacturing Facility in New York

Cree Announces Plan to Build World’s Largest SiC Device Manufacturing Facility in New York

Cree the global leader in silicon carbide (SiC) technology, today announced plans to establish a silicon carbide corridor in New York with the…


new products Sep 23, 2019 by Cree
Researchers Pursuing Advanced Control Techniques for Semiconductor Process Power Applications

Researchers Pursuing Advanced Control Techniques for Semiconductor Process Power Applications


News Sep 22, 2019 by Paul Shepard
FPGA-Based Inverter Modules use Custom SiC MOSFETs to Power Electric Racing Car

FPGA-Based Inverter Modules use Custom SiC MOSFETs to Power Electric Racing Car


News Sep 14, 2019 by Paul Shepard
Low-Cost Version of 600V Half-Bridge Driver IC

Low-Cost Version of 600V Half-Bridge Driver IC

Delphi and Cree Partner on 800V SiC Inverter to Cut EV Charging Time in Half

Delphi and Cree Partner on 800V SiC Inverter to Cut EV Charging Time in Half


News Sep 11, 2019 by Paul Shepard
RIGOL Introduces New “Possibilities and More” Brand Identity

RIGOL Introduces New “Possibilities and More” Brand Identity

This article features RIGOL Technologies launch of its redesigned brand identity system as well as the 3rd generation brand tagline…


new products Sep 11, 2019 by RIGOL
HCL Technologies Acquires Sankalp Semiconductor

HCL Technologies Acquires Sankalp Semiconductor


News Sep 10, 2019 by Paul Shepard
DuPont Electronics & Imaging Divests SiC Wafer Business to SK Siltron

DuPont Electronics & Imaging Divests SiC Wafer Business to SK Siltron


News Sep 10, 2019 by Paul Shepard
Taiwan Semiconductor Introduces Dual N-Channel Power MOSFET in-a-PDFN56 Dual Package

Taiwan Semiconductor Introduces Dual N-Channel Power MOSFET in-a-PDFN56 Dual Package

Taiwan Semiconductor Introduces Dual N-Channel Power MOSFET in a PDFN56 Dual Package.


STMicroelectronics to Supply Advanced Silicon-Carbide Power Electronics to Renault-Nissan-Mitsubishi for High-Speed Battery Charging in Next-Generation Electric Vehicles

STMicroelectronics to Supply Advanced Silicon-Carbide Power Electronics to Renault-Nissan-Mitsubishi for High-Speed Battery Charging in Next-Generation Electric Vehicles

This article highlights STMicroelectronics to Supply Advanced Silicon-Carbide Power Electronics to Renault-Nissan-Mitsubishi (Alliance) for battery…


STMicroelectronics to Supply Advanced SiC Power Electronics to Renault-Nissan-Mitsubishi for HighSpeed Battery Charging in EVs

STMicroelectronics to Supply Advanced SiC Power Electronics to Renault-Nissan-Mitsubishi for HighSpeed Battery Charging in EVs

STMicroelectronics has been chosen to supply high-efficiency silicon-carbide power electronics to Renault-Nissan-Mitsubishi for advanced on-board…


Delphi Technologies to Partner with Cree for Automotive Silicon Carbide Devices

Delphi Technologies to Partner with Cree for Automotive Silicon Carbide Devices

This article features Delphi Technologies and Cree, Inc. partnership to utilize SiC semiconductor device technology to enable powerful electronic…


new products Sep 09, 2019 by Cree
Renault-Nissan-Mitsubishi to use STMicro SiC for High-Speed EV Battery Charging

Renault-Nissan-Mitsubishi to use STMicro SiC for High-Speed EV Battery Charging


News Sep 08, 2019 by Paul Shepard
The Next Generation of SiC Power Modules

The Next Generation of SiC Power Modules

This article features Mitsubishi Electric SiC power modules as next big step in modern power electronics for high-power converters with high…


New Theory Models the Nature of Silicon-Carbide Crystal Defects

New Theory Models the Nature of Silicon-Carbide Crystal Defects


News Sep 03, 2019 by Paul Shepard
World’s First Multi-Cell GaN-HEMT Bonded Directly to Diamond Substrate

World’s First Multi-Cell GaN-HEMT Bonded Directly to Diamond Substrate


News Sep 01, 2019 by Paul Shepard
Low-Profile 0402-Sized Chip Inductors Handle up to 2.3A

Low-Profile 0402-Sized Chip Inductors Handle up to 2.3A

SparkFun gets FCC/IC/CE Mark Approval on Open-Source BLE Module

SparkFun gets FCC/IC/CE Mark Approval on Open-Source BLE Module


News Aug 29, 2019 by Paul Shepard