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IC supports USB Power Delivery 2.0 and 3.0 Specifications

IC supports USB Power Delivery 2.0 and 3.0 Specifications

Dimmable LED Driver IC with 650V MOSFET and PFC

Dimmable LED Driver IC with 650V MOSFET and PFC

3rd Gen SiC SBDs, Full SiC Modules, and Arduino Shield for Stepper Motors

3rd Gen SiC SBDs, Full SiC Modules, and Arduino Shield for Stepper Motors

SiC-based Analog Op Amp with Temperature Gain of 200 at 400 C

SiC-based Analog Op Amp with Temperature Gain of 200 at 400 C

$13.5M for Large-Diameter SiC Substrates for SiC and GaN Devices

$13.5M for Large-Diameter SiC Substrates for SiC and GaN Devices


News Apr 05, 2016 by Jeff Shepard
Programmable Mixed-signal IC adds Asynchronous State Machine

Programmable Mixed-signal IC adds Asynchronous State Machine

Is Only Full SiC the “Real“ SiC?

Is Only Full SiC the “Real“ SiC?

Whenever we talk about Silicon Carbide and its applications, our thoughts jump to Silicon Carbide MOSFET power modules, the so called “Full…


The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

This article highlights Infineon Technologies AG Silicon Carbide transistors development for industrial power electronics applications and the goal…


Test System for the Power Semiconductor Industry

Test System for the Power Semiconductor Industry

System Solution: “SiC-Inverter for Industrial Motor Drive”

System Solution: “SiC-Inverter for Industrial Motor Drive”

This article discusses the advantages of Silicon Carbide for industrial motor drive inverters over the silicon counter-part of such devices.


Thermal FOM for Chip-Scale Packaged GaN Transistors

Thermal FOM for Chip-Scale Packaged GaN Transistors

Radiation Action on IV Characteristics of Power Semiconductor Devices Based on Silicon

Radiation Action on IV Characteristics of Power Semiconductor Devices Based on Silicon

Results of theoretical research of influence of cumulative dose on I-V characteristics (IVC) of power semiconductor devices based on silicon are…


1200V SiC FETs in Gruppo PBM Battery Chargers on Show

1200V SiC FETs in Gruppo PBM Battery Chargers on Show

GE gets $2.1M for SiC Development from U.S. Army

GE gets $2.1M for SiC Development from U.S. Army


News Mar 17, 2016 by Jeff Shepard
Current-Sense Chip Resistor rated for 1.5W

Current-Sense Chip Resistor rated for 1.5W

1-GHz Optically-Isolated Measurement System for GaN and SiC

1-GHz Optically-Isolated Measurement System for GaN and SiC

Monolith Semi to Demonstrate SiC MOSFETs at APEC

Monolith Semi to Demonstrate SiC MOSFETs at APEC

1200V SiC Diode for Rugged High-Frequency Inverters

1200V SiC Diode for Rugged High-Frequency Inverters

Global Power Technologies’ SiC on Show in Long Beach

Global Power Technologies’ SiC on Show in Long Beach

6-inch SiC Production expanding in Asia and U.S.A.

6-inch SiC Production expanding in Asia and U.S.A.


News Mar 10, 2016 by Jeff Shepard