The line between the nascent electric vehicle industry and the electronics world is getting ever more blurred, and nowhere is this more prevalent…
The line between the nascent electric vehicle industry and the electronics world is getting ever more blurred, and nowhere is this more prevalent…
STMicro and Advantest create an advanced test cell to help improve efficiency of semiconductor testing and overall operations.
STMicro and Advantest create an advanced test cell to help improve efficiency of semiconductor testing and overall operations.
GaN Systems, a leading manufacturer of Gallium Nitride-based power conversion devices, released a series of predictions…
GaN Systems, a leading manufacturer of Gallium Nitride-based power conversion devices, released a series of predictions set to define the power…
Hassane El-Khoury, the former chief executive officer and president of Cypress Semiconductor, has been named the new CEO…
Hassane El-Khoury, the former chief executive officer and president of Cypress Semiconductor, has been named the new CEO and president of ON…
Transphorm’s fifth generation of gallium nitride (GaN) FET outperforms standard Silicon carbide (SiC) solutions in…
Transphorm’s fifth generation of gallium nitride (GaN) FET outperforms standard Silicon carbide (SiC) solutions in power, design flexibility, and…
EPC introduces the 40 V, 3 milliohm EPC2055 eGaN FET, offering designers a device that is smaller, more efficient, and…
EPC introduces the 40 V, 3 milliohm EPC2055 eGaN FET, offering designers a device that is smaller, more efficient, and more reliable than currently…
Performance tests show it can charge three digital devices simultaneously while also supplying power to three 220V…
Performance tests show it can charge three digital devices simultaneously while also supplying power to three 220V devices, such as speakers, TVs,…
This article highlights MinDCet GaN-based Half-Bridge Evaluation kit (MDC901-EVKHB), based on the MinDCet MDC901 GaN…
This article highlights MinDCet GaN-based Half-Bridge Evaluation kit (MDC901-EVKHB), based on the MinDCet MDC901 GaN gate driver and two GaN…
The PA is internally matched and requires no additional external RF components, enabling designers and system integrators…
The PA is internally matched and requires no additional external RF components, enabling designers and system integrators to maximize design by…
This article highlights EiceDRIVER™ portfolio with a 1200 V three-phase gate driver that is based on the company’s…
This article highlights EiceDRIVER™ portfolio with a 1200 V three-phase gate driver that is based on the company’s unique silicon-on-insulator…
Dual-MOSFET devices simplify automotive solenoid control circuits by saving space, reducing component count and improving…
Dual-MOSFET devices simplify automotive solenoid control circuits by saving space, reducing component count and improving reliability.
What will the beginning of 2021 look like and how could the power and semiconductor industries be affected?
What will the beginning of 2021 look like and how could the power and semiconductor industries be affected?
The new kits are designed to give designers a first hand look at the benefits of gallium nitride semiconductors
The new kits are designed to give designers a first hand look at the benefits of gallium nitride semiconductors
AEC-Q101 qualified single and dual N-channel trench MOSFETs feature 175° T j rating, wettable flank PDFN package and…
AEC-Q101 qualified single and dual N-channel trench MOSFETs feature 175° T j rating, wettable flank PDFN package and 100% compliance with…
GaN Systems announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration…
GaN Systems announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration with ON Semiconductor.
This article discusses how LEDs have a limited lifetime since the luminous flux decreases over time, and the methods to…
This article discusses how LEDs have a limited lifetime since the luminous flux decreases over time, and the methods to estimate the LEDs lifetime.
UnitedSiC’s gen 4 technology enables enhanced figures of merit.
UnitedSiC’s gen 4 technology enables enhanced figures of merit.
Würth Elektronik presents its WE-AGDT transformers for SiC MOSFET gate drivers.
Würth Elektronik presents its WE-AGDT transformers for SiC MOSFET gate drivers.
The compact 5 by 6 mm device is said to be the first of its type to feature AEC-Q101 qualification
The compact 5 by 6 mm device is said to be the first of its type to feature AEC-Q101 qualification
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