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Vishay Adds Metallized-Polypropylene Film Snubber Capacitor for Direct IGBT Mounting

Vishay Adds Metallized-Polypropylene Film Snubber Capacitor for Direct IGBT Mounting

600V GaN Normally-Off “Gate Injection” Power Transistor Intro’d by Panasonic

600V GaN Normally-Off “Gate Injection” Power Transistor Intro’d by Panasonic

Toshiba Launches 600V System Super-Junction MOSFET DTMOSIV High-Speed Diode Series

Toshiba Launches 600V System Super-Junction MOSFET DTMOSIV High-Speed Diode Series

Sankalp Semiconductor Appoints Samir Patel as CEO

Sankalp Semiconductor Appoints Samir Patel as CEO


News Mar 31, 2013 by Jeff Shepard
Mitsubishi Electric Delivers 140kVA SiC Auxiliary Power Supply Systems for Railcars

Mitsubishi Electric Delivers 140kVA SiC Auxiliary Power Supply Systems for Railcars


News Mar 25, 2013 by Jeff Shepard
Infineon Enters the Market for High-Voltage Hyperfast Silicon Diodes

Infineon Enters the Market for High-Voltage Hyperfast Silicon Diodes

Toshiba Debuts 600V Super Junction MOSFET DTMOS IV High Speed Diode Series

Toshiba Debuts 600V Super Junction MOSFET DTMOS IV High Speed Diode Series

ROHM SiC MOS Module, without a Schottky Diode Enters High-Volume Production

ROHM SiC MOS Module, without a Schottky Diode Enters High-Volume Production

APEI and GaN Systems Demonstrate High-Efficiency DC-DC Boost Converter with GaN Switch

APEI and GaN Systems Demonstrate High-Efficiency DC-DC Boost Converter with GaN Switch


News Mar 18, 2013 by Jeff Shepard
20-V P-Channel FET in 3.3-mm Square Package with On-Resistance of 4.8 mΩ Added by Vishay

20-V P-Channel FET in 3.3-mm Square Package with On-Resistance of 4.8 mΩ Added by Vishay

Microsemi Adds Multiple Devices to NPT IGBT Product Family

Microsemi Adds Multiple Devices to NPT IGBT Product Family

Powerex/Mitsubishi Electric Power Semiconductors Expand Worldwide Web Sales

Powerex/Mitsubishi Electric Power Semiconductors Expand Worldwide Web Sales


News Mar 12, 2013 by Jeff Shepard
Transphorm Scales Up to 200-mm Wafers with AIX G5+ GaN-on-Si System from AIXTRON

Transphorm Scales Up to 200-mm Wafers with AIX G5+ GaN-on-Si System from AIXTRON


News Mar 12, 2013 by Jeff Shepard
Transphorm Releases First JEDEC-Qualified 600V GaN-on-Silicon Power Devices

Transphorm Releases First JEDEC-Qualified 600V GaN-on-Silicon Power Devices

Global Power Device Comes out of Stealth, Launches SiC Devices

Global Power Device Comes out of Stealth, Launches SiC Devices

Second-Generation SiC MOSFETs from Cree Deliver Twice the Amps-Per-Dollar

Second-Generation SiC MOSFETs from Cree Deliver Twice the Amps-Per-Dollar

10A / 1200V SiC Schottky Rectifier Improves High-Temperature Performance

10A / 1200V SiC Schottky Rectifier Improves High-Temperature Performance

Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC Enables 175C Operation

Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC Enables 175C Operation

Diodes Incorporated Closes Acquisition of BCD Semiconductor

Diodes Incorporated Closes Acquisition of BCD Semiconductor


News Mar 05, 2013 by Jeff Shepard
SemiSouth Lab’s SiC Manufacturing and Test Equipment to be Sold via Global Webcast Auction

SemiSouth Lab’s SiC Manufacturing and Test Equipment to be Sold via Global Webcast Auction


News Mar 05, 2013 by Jeff Shepard